| Presentation | 2010-01-14 Interface characteristics of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures Chihoko Mizue, Yujin Hori, Tamotsu Hashizume, |
|---|---|
| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have fabricated the insulated Al_2O_3-gate structure on Al_<0.25>Ga_<0.75>N and n-GaN, and characterized the insulator/semiconductor interface. Al_2O_3 layer was deposited by atomic layer deposition method using tri-methyl aluminum(TMA)and H_2O as source. After deposition, Al_2O_3 layer was annealed in N_2 gas. In the Al_2O_3/AlGaN/GaN structure, capacitance-voltage(C-V)characterization had been carried out. From the systematic C-V characteristics, the minimum density of interface state was estimated to be ～5x10^<12>cm^<-2>eV^<-1>. Additionally, we have characterized the Al_2O_3/n-GaN structure by photo-assisted C-V measurement. Dispersion of the C-V curves was significant with the larger photon energy. From the comparison of illuminated and dark C-V characteristics, change of interface charge was estimated to be 3x10^<13>cm^<-2>eV^<-1> in the mid-gap range. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Al_2O_3 / Al_xGa_<1-x>N / insulated gate / atomic layer deposition / interface state / C-V characterization / photo-assist |
| Paper # | ED2009-185,MW2009-168 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
|---|---|
| Conference Date | 2010/1/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Interface characteristics of Al2O3/AlGaN/GaN and Al2O3/n-GaN structures |
| Sub Title (in English) | |
| Keyword(1) | Al_2O_3 |
| Keyword(2) | Al_xGa_<1-x>N |
| Keyword(3) | insulated gate |
| Keyword(4) | atomic layer deposition |
| Keyword(5) | interface state |
| Keyword(6) | C-V characterization |
| Keyword(7) | photo-assist |
| 1st Author's Name | Chihoko Mizue |
| 1st Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University() |
| 2nd Author's Name | Yujin Hori |
| 2nd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| 3rd Author's Name | Tamotsu Hashizume |
| 3rd Author's Affiliation | Research Center for Integrated Quantum Electronics, Hokkaido University |
| Date | 2010-01-14 |
| Paper # | ED2009-185,MW2009-168 |
| Volume (vol) | vol.109 |
| Number (no) | 360 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |