| Presentation | 2010-01-14 InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric Toru KANAZAWA, Kazuya WAKABAYASHI, Hisashi SAITO, Ryosuke TERAO, Tomonori TAJIMA, Shunsuke IKEDA, Yasuyuki MIYAMOTO, Kazuhito FURUYA, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | III-V semiconductor device technology will potentially be combined with the LSI technology to realize circuits with capabilities that are greater than those of current CMOS circuits. In this report, we have demonstrated undoped InP 5 nm/InGaAs 12 nm composite channel III-V MOSFET with Al_2O_3 gate dielectric. The maximum transconductance(gm)at V_d=1 V was 150 mS/mm it was higher than the g_m of MOSFET with SiO_2 gate dielectric. Moreover, g_m was improved to 270 mS/mm and subthreshold swing was decreased to 179 mV/dec from 731 mV/dec using the rapid thermal annealing at 350°C in N_2 ambient. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOSFET / III-V compound semiconductor / high-k dielectric / high mobility channel |
| Paper # | ED2009-181,MW2009-164 |
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2010/1/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | InP/InGaAs composite channel MOSFET with Al2O3 gate dielectric |
| Sub Title (in English) | |
| Keyword(1) | MOSFET |
| Keyword(2) | III-V compound semiconductor |
| Keyword(3) | high-k dielectric |
| Keyword(4) | high mobility channel |
| 1st Author's Name | Toru KANAZAWA |
| 1st Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology() |
| 2nd Author's Name | Kazuya WAKABAYASHI |
| 2nd Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 3rd Author's Name | Hisashi SAITO |
| 3rd Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 4th Author's Name | Ryosuke TERAO |
| 4th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 5th Author's Name | Tomonori TAJIMA |
| 5th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 6th Author's Name | Shunsuke IKEDA |
| 6th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 7th Author's Name | Yasuyuki MIYAMOTO |
| 7th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| 8th Author's Name | Kazuhito FURUYA |
| 8th Author's Affiliation | Dept. of Physical Electronics, Tokyo Institute of Technology |
| Date | 2010-01-14 |
| Paper # | ED2009-181,MW2009-164 |
| Volume (vol) | vol.109 |
| Number (no) | 360 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |