Presentation 2010-01-14
Development of high-performance ZnO-based FETs : Device applications and microwave performance
Shigehiko SASA, Kazuto KOIKE, Toshihiko MAEMOTO, Mitsuaki YANO, Masataka INOUE,
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Abstract(in English) Zinc Oxide(ZnO)has various advantages over other wide gap semiconductors. In order to evaluate its material feasibility, we exploited the device performance using heterostructure FETs for both DC and microwave characteristics. As one of the possible applications for ZnO-based FETs, we report on an implementation to bio-sensing devices.
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Keyword(in English) ZnO / FET / sensor / MBE / sputtering
Paper # ED2009-184,MW2009-167
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Committee ED
Conference Date 2010/1/6(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Development of high-performance ZnO-based FETs : Device applications and microwave performance
Sub Title (in English)
Keyword(1) ZnO
Keyword(2) FET
Keyword(3) sensor
Keyword(4) MBE
Keyword(5) sputtering
1st Author's Name Shigehiko SASA
1st Author's Affiliation Nanomaterials Microdevices Research Center, Osaka Inst. of Tech.()
2nd Author's Name Kazuto KOIKE
2nd Author's Affiliation Nanomaterials Microdevices Research Center, Osaka Inst. of Tech.
3rd Author's Name Toshihiko MAEMOTO
3rd Author's Affiliation Nanomaterials Microdevices Research Center, Osaka Inst. of Tech.
4th Author's Name Mitsuaki YANO
4th Author's Affiliation Nanomaterials Microdevices Research Center, Osaka Inst. of Tech.
5th Author's Name Masataka INOUE
5th Author's Affiliation Nanomaterials Microdevices Research Center, Osaka Inst. of Tech.
Date 2010-01-14
Paper # ED2009-184,MW2009-167
Volume (vol) vol.109
Number (no) 360
Page pp.pp.-
#Pages 6
Date of Issue