| Presentation | 2010-01-14 AlGaN channel high electron mobility transistors on AlN substrates Shin HASHIMOTO, Katsushi AKITA, Tatsuya TANABE, Hideaki NAKAHATA, Kenichiro TAKEDA, Hiroshi AMANO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Epitaxial structures of AlGaN channel high electron mobility transistors(HEMTs)were grown on sapphire and AlN substrates. Reduction in the full width at half maximum of X-ray rocking curve for(10-12)peak of the AlGaN channel layer owing to the reduction of threading dislocation densities resulted in a sharp decrease in the sheet resistance of 2-dimensional electron gas(2DEG). In the case of AlGaN channel HEMTs, it was found that improvement of the crystalline quality of AlGaN channel layers is essential to the reduction of the sheet resistance of 2DEG. The use of AlN substrates resulted in improved crystalline quality of the AlGaN layer and lower 2DEG resistance, suggesting the high potential of AlN substrates for AlGaN channel HEMTs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlN / AlGaN / HEMT / AlN substrate |
| Paper # | ED2009-188,MW2009-171 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2010/1/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN channel high electron mobility transistors on AlN substrates |
| Sub Title (in English) | |
| Keyword(1) | AlN |
| Keyword(2) | AlGaN |
| Keyword(3) | HEMT |
| Keyword(4) | AlN substrate |
| 1st Author's Name | Shin HASHIMOTO |
| 1st Author's Affiliation | Sumitomo Electric Industries() |
| 2nd Author's Name | Katsushi AKITA |
| 2nd Author's Affiliation | Sumitomo Electric Industries |
| 3rd Author's Name | Tatsuya TANABE |
| 3rd Author's Affiliation | Sumitomo Electric Industries |
| 4th Author's Name | Hideaki NAKAHATA |
| 4th Author's Affiliation | Sumitomo Electric Industries |
| 5th Author's Name | Kenichiro TAKEDA |
| 5th Author's Affiliation | Meijo University |
| 6th Author's Name | Hiroshi AMANO |
| 6th Author's Affiliation | Meijo University |
| Date | 2010-01-14 |
| Paper # | ED2009-188,MW2009-171 |
| Volume (vol) | vol.109 |
| Number (no) | 360 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |