| Presentation | 2010-01-14 A Normally-off AlGaN/GaN HFET with High Threshold Voltage Uniformity Kazuki OTA, Kazuomi ENDO, Yasuhiro OKAMOTO, Yuji ANDO, Hironobu Miyamoto, Hidenori SHIMAWAKI, |
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| Abstract(in Japanese) | (See Japanese page) | ||||||
| Abstract(in English) | In this paper, we successfully demonstrate a recessed gate normally-off AlGaN/GaN HFET on a silicon substrate with high threshold voltage(V_ | )uniformity and low on-resistance. In order to realize high V_ | uniformity, a novel V_ | control technique is proposed, which we call "piezo neutralization technique". This technique includes a piezo neutralization(PNT)layer formed at the bottom of the gate recess. Since the PNT layer neutralizes the polarization charges under the gate, the V_ | comes to be independent of the gate-to-channel span. The fabricated normally-off GaN FET with PNT structure exhibits an excellent V_ | uniformity(σV_ | =18mV)and a state-of-the-art combination of the specific on-resistance(R_ |
| Keyword(in Japanese) | (See Japanese page) | ||||||
| Keyword(in English) | GaN / AlGaN / FET / E-mode / normally-off / uniformity / recessed gate | ||||||
| Paper # | ED2009-189,MW2009-172 | ||||||
| Date of Issue |
| Conference Information | |
| Committee | ED |
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| Conference Date | 2010/1/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A Normally-off AlGaN/GaN HFET with High Threshold Voltage Uniformity |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN |
| Keyword(3) | FET |
| Keyword(4) | E-mode |
| Keyword(5) | normally-off |
| Keyword(6) | uniformity |
| Keyword(7) | recessed gate |
| 1st Author's Name | Kazuki OTA |
| 1st Author's Affiliation | Nano Electronics Research Laboratories, NEC Corporation() |
| 2nd Author's Name | Kazuomi ENDO |
| 2nd Author's Affiliation | Nano Electronics Research Laboratories, NEC Corporation |
| 3rd Author's Name | Yasuhiro OKAMOTO |
| 3rd Author's Affiliation | Nano Electronics Research Laboratories, NEC Corporation |
| 4th Author's Name | Yuji ANDO |
| 4th Author's Affiliation | Nano Electronics Research Laboratories, NEC Corporation |
| 5th Author's Name | Hironobu Miyamoto |
| 5th Author's Affiliation | Nano Electronics Research Laboratories, NEC Corporation |
| 6th Author's Name | Hidenori SHIMAWAKI |
| 6th Author's Affiliation | Nano Electronics Research Laboratories, NEC Corporation |
| Date | 2010-01-14 |
| Paper # | ED2009-189,MW2009-172 |
| Volume (vol) | vol.109 |
| Number (no) | 360 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |