Presentation	2010-01-15 A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP HEMTs Yasuhiro NAKASHA, Yoichi KAWANO, Toshihide SUZUKI, Toshihiro OHKI, Tsuyoshi TAKAHASHI, Kozo MAKIYAMA, Naoki HARA,
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Abstract(in Japanese)	(See Japanese page)
Abstract(in English)	In order to realize impulse radio systems that have a data rate of 10 Gb/s and beyond in sub-terahertz wave bands, a pulse generator IC(PG)was developed in 75-nm InP HEMP technology that involves cavity structure around the gate electrode for reducing parasitic capacitances, resulting in superior high-frequency and low-noise performance(g_m: 2 S/mm, f_T: 390 GHz, f_: 490 GHz). The PG generates extremely short pulses having a full width at half maximum(FWHM)of less than 4.9 ps at 20 Gb/s. To the best of our knowledge, the FWHM, which is undeconvolved from an oscilloscope's transition time of 3.5 ps, is a record for PGs using any semiconductor transistors and is as small as that from PGs using nonlinear transmission lines(NLTLs)with Schottky diodes. The developed IC is also applicable to various broadband systems such as measurement equipment with a bandwidth of over 100 GHz and high-resolution pulse radar.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	millimeter wave / sub-terahertz wave / impulse radio / pulse generator / FWHM / InP HEMT / cavity structure
Paper #	ED2009-190,MW2009-173
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Conference Information
Committee	ED
Conference Date	2010/1/6(1days)
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Paper Information
Registration To	Electron Devices (ED)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	A 20-Gb/s Pulse Generator with 4.9-ps FWHM using 75-nm InP HEMTs
Sub Title (in English)
Keyword(1)	millimeter wave
Keyword(2)	sub-terahertz wave
Keyword(3)	impulse radio
Keyword(4)	pulse generator
Keyword(5)	FWHM
Keyword(6)	InP HEMT
Keyword(7)	cavity structure
1st Author's Name	Yasuhiro NAKASHA
1st Author's Affiliation	FUJITSU LIMITED()
2nd Author's Name	Yoichi KAWANO
2nd Author's Affiliation	FUJITSU LIMITED
3rd Author's Name	Toshihide SUZUKI
3rd Author's Affiliation	FUJITSU LIMITED
4th Author's Name	Toshihiro OHKI
4th Author's Affiliation	FUJITSU LABORATORIES LTD.
5th Author's Name	Tsuyoshi TAKAHASHI
5th Author's Affiliation	FUJITSU LIMITED
6th Author's Name	Kozo MAKIYAMA
6th Author's Affiliation	FUJITSU LIMITED
7th Author's Name	Naoki HARA
7th Author's Affiliation	FUJITSU LIMITED
Date	2010-01-15
Paper #	ED2009-190,MW2009-173
Volume (vol)	vol.109
Number (no)	360
Page	pp.pp.-
#Pages	6
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