| Presentation | 2010-01-14 Analysis of Transient Response of HfO_2/AlGaN/GaN MOSFETs Yoshihisa HAYASHI, Shigeru KISHIMOTO, Takashi MIZUTANI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Analysis of transient response of HfO_2/AlGaN/GaN MOSFETs was performed by using the two-dimensional device simulation to investigate the effect of interface traps at the HfO_2/AlGaN interface. In experiment, the threshold voltage shifted toward the positive direction after the positive gate bias stress. The amount of threshold voltage shift was dependent on waiting time after the gate bias stress. The simulation results assuming three trap levels of E_C-E_T=0.4, 0.765, 1.65 eV which were obtained based on the analytical consideration of this experimental result explained the experimental results well. The shallow traps at E_C-E_T= 0.4 eV caused the g_m decrease at large V_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HfO_2/AlGaN/GaN MOSFET / device simulation / interface trap / transient response |
| Paper # | ED2009-186,MW2009-169 |
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| Conference Information | |
| Committee | ED |
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| Conference Date | 2010/1/6(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Electron Devices (ED) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Transient Response of HfO_2/AlGaN/GaN MOSFETs |
| Sub Title (in English) | |
| Keyword(1) | HfO_2/AlGaN/GaN MOSFET |
| Keyword(2) | device simulation |
| Keyword(3) | interface trap |
| Keyword(4) | transient response |
| 1st Author's Name | Yoshihisa HAYASHI |
| 1st Author's Affiliation | Department of Quantum Engineering, Nagoya University() |
| 2nd Author's Name | Shigeru KISHIMOTO |
| 2nd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| 3rd Author's Name | Takashi MIZUTANI |
| 3rd Author's Affiliation | Department of Quantum Engineering, Nagoya University |
| Date | 2010-01-14 |
| Paper # | ED2009-186,MW2009-169 |
| Volume (vol) | vol.109 |
| Number (no) | 360 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |