IEICE Technical Committee

Electronics-Silicon Devices and Materials(Date:2006/03/07)

Presentation

[Date]2006/3/7
[Paper #]

Crystal and surface structures of GST film and phase-change controlability of lateral type GST phase-change resistor

Sumio HOSAKA, Akihira MIYACHI, You YIN, Daisuke NIIDA, Hayato SONE,

[Date]2006/3/7
[Paper #]SDM2005-259

Oxygen-doped GeSbTe Phase-change Memory Cells

N. Matsuzaki, K. Kurotsuchi, Y. Matsui, O. Tonomura, N. Yamamoto, Y. Fujisaki, N. Kitai, R. Takemura, K. Osada, S. Hanzawa, H. Moriya, T. Iwasaki, T. Kawahara, N. Takaura, M. Terao, M. Matsuoka, M. Moniwa,

[Date]2006/3/7
[Paper #]SDM2005-260

Three Terminal Solid-Electrolyte Nanometer Switch

Toshitsugu SAKAMOTO, Nanoki BANNO, Noriyuki IGUCHI, Shunichi KAERIYAMA, Masayuki MIZUNO, Hisao KAWAURA, Tsuyoshi HASEGAWA, Kazuya TERABE, Masakazu AONO,

[Date]2006/3/7
[Paper #]SDM2005-261

Reversible Resistive Switching in the Ferroelectrics

Yoshito JIN, Hideaki SAKAI, Hiroyuki SHINOJIMA, Masaru SHIMADA, Youichi ENOMOTO, Mikiho KIUCHI,

[Date]2006/3/7
[Paper #]SDM2005-262

Decrease Magnetic Switching Field Using Sandglass MTJ Shaped Cell for High-Density MRAM

Yoshihiro SATO, Shinya YAGAKI, Chikako YOSHIDA, Hideyuki NOSHIRO, Masashige SATO, Masaki AOKI, Yoshihiro SUGIYAMA,

[Date]2006/3/7
[Paper #]SDM2005-263

Development of high-density MRAM technologies : Expanding writing margin realized by a novel MTJ shape and a precisely controlled MTJ etching

Masatoshi YOSHIKAWA, Hiroaki YODA, Tadashi KAI, Yoshiaki ASAO, Sumio IKEGAWA, Kenji TSUCHIDA, Hiromitsu HADA, Shuichi TAHARA,

[Date]2006/3/7
[Paper #]SDM2005-264

Low Power Design of System LSI in the Presence of Leakage Current of MOSFET

Sigeyoshi Watanabe,