| Presentation | 2006/3/7 Improved electrical properties of metal-ferroelectric-insulator-semiconductor by irradiation with a radical Takeshi KANASHIMA, Le VAN HAI, Masao YOSHINAGA, Masanori OKUYAMA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently, new non-volatile memories have gathered much attention for application to high-density, high-speed and low-consumption memories. Pt/SrBi_2Ta_2O_9 (SBT)/SiO_2/n-Si metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric gate structures were prepared using SET thin film whose surface is modified by nitrogen and oxygen radicals. The effects of improving interface properties on memory retention characteristic have been investigated. The SBT film was deposited by using metal-organic decomposition. The XRD and XPS results show that modified thin layer is formed only on the surface by the irradiation with oxygen and nitrogen radicals. Ultraviolet photo-yield spectroscopy (UV-PYS) has been studied to estimate the Fermi-level. The SBT thin film with nitrogen treatment has exhibited the higher threshold energy than that without the irradiation. Thus the leakage current is decreased by the irradiation with nitrogen radical. C-V characteristic shows clearly memory window and sharp slopes corresponding to good interface layer. Memory windows of the MFIS structures are in the range of 1-2 V when the gate voltage is varied from 3 to 6 V. It is considered to contribute to reduce the leakage current through metal-ferroelectric junction. As a result, it is found that the retention characteristic in shows ON and OFF states and can be defined clearly after over 10^6 seconds. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nitrogen radical / Oxygen radical / SrBi_2Ta_2O_9 (SBT) / Retention / UV-PYS |
| Paper # | SDM2005-267 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2006/3/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improved electrical properties of metal-ferroelectric-insulator-semiconductor by irradiation with a radical |
| Sub Title (in English) | |
| Keyword(1) | Nitrogen radical |
| Keyword(2) | Oxygen radical |
| Keyword(3) | SrBi_2Ta_2O_9 (SBT) |
| Keyword(4) | Retention |
| Keyword(5) | UV-PYS |
| 1st Author's Name | Takeshi KANASHIMA |
| 1st Author's Affiliation | Department of Systems Innovation, Graduate School of Engineering Science, Osaka University() |
| 2nd Author's Name | Le VAN HAI |
| 2nd Author's Affiliation | Department of Systems Innovation, Graduate School of Engineering Science, Osaka University |
| 3rd Author's Name | Masao YOSHINAGA |
| 3rd Author's Affiliation | Department of Systems Innovation, Graduate School of Engineering Science, Osaka University |
| 4th Author's Name | Masanori OKUYAMA |
| 4th Author's Affiliation | Department of Systems Innovation, Graduate School of Engineering Science, Osaka University |
| Date | 2006/3/7 |
| Paper # | SDM2005-267 |
| Volume (vol) | vol.105 |
| Number (no) | 654 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |