| Presentation | 2006/3/7 Decrease Magnetic Switching Field Using Sandglass MTJ Shaped Cell for High-Density MRAM Yoshihiro SATO, Shinya YAGAKI, Chikako YOSHIDA, Hideyuki NOSHIRO, Masashige SATO, Masaki AOKI, Yoshihiro SUGIYAMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose a novel magnetic tunneling junction (MTJ) shape, called the "sandglass" (or "hourglass"), that has both an excellent asteroid curve for preventing write disturbance and a minimum memory of 8F^2, where F is the feature size. A unique magnetic switching mechanism that works under decreasing magnetic switching field was compared with that of conventional MTJs simulated using the Landau-Lifshitz-Gilbert (LLG) simulator. We fabricated both a sandglass MTJ of 260×420nm^2 and a conventional elliptic MTJ of 200×400nm^2. The excellent asteroid curve of the sandglass MTJ is confirmed which exhibits both a larger write operation margin and a 50% lower switching field than those of the conventional elliptic MTJ. The sandglass MTJ cell is a promising candidate for realizing high-density MRAM. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Magnetoresistive Random access Memory (MRAM) / Magnetic Tunneling Junction (MTJ) / disturbance / operation margin / sandglass / asteroid |
| Paper # | SDM2005-263 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/3/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Decrease Magnetic Switching Field Using Sandglass MTJ Shaped Cell for High-Density MRAM |
| Sub Title (in English) | |
| Keyword(1) | Magnetoresistive Random access Memory (MRAM) |
| Keyword(2) | Magnetic Tunneling Junction (MTJ) |
| Keyword(3) | disturbance |
| Keyword(4) | operation margin |
| Keyword(5) | sandglass |
| Keyword(6) | asteroid |
| 1st Author's Name | Yoshihiro SATO |
| 1st Author's Affiliation | Silicon Device Laboratory, FUJITSU LAB.() |
| 2nd Author's Name | Shinya YAGAKI |
| 2nd Author's Affiliation | Silicon Device Laboratory, FUJITSU LAB. |
| 3rd Author's Name | Chikako YOSHIDA |
| 3rd Author's Affiliation | Silicon Device Laboratory, FUJITSU LAB. |
| 4th Author's Name | Hideyuki NOSHIRO |
| 4th Author's Affiliation | Silicon Device Laboratory, FUJITSU LAB. |
| 5th Author's Name | Masashige SATO |
| 5th Author's Affiliation | Silicon Device Laboratory, FUJITSU LAB. |
| 6th Author's Name | Masaki AOKI |
| 6th Author's Affiliation | Silicon Device Laboratory, FUJITSU LAB. |
| 7th Author's Name | Yoshihiro SUGIYAMA |
| 7th Author's Affiliation | Silicon Device Laboratory, FUJITSU LAB. |
| Date | 2006/3/7 |
| Paper # | SDM2005-263 |
| Volume (vol) | vol.105 |
| Number (no) | 654 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |