| Presentation | 2006/3/7 Oxygen-doped GeSbTe Phase-change Memory Cells N. Matsuzaki, K. Kurotsuchi, Y. Matsui, O. Tonomura, N. Yamamoto, Y. Fujisaki, N. Kitai, R. Takemura, K. Osada, S. Hanzawa, H. Moriya, T. Iwasaki, T. Kawahara, N. Takaura, M. Terao, M. Matsuoka, M. Moniwa, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We demonstrated the operation of phase-change memory cells that enabled 1.5-V/100-μA programming through a tungsten-bottom-electrode contact with a diameter of 180nm. This is the lowest power ever reported. This was achieved with oxygen-doped GeSbTe, and resulted from the high electric resistance of the germanium oxides in this material. Germanium oxides were also estimated to restrain the growth of crystal in GeSbTe, and our cells maintained a 10-year thermal lifetime at 100℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Phase-change Memory / GeSbTe / Oxygen doping |
| Paper # | SDM2005-260 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 2006/3/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Oxygen-doped GeSbTe Phase-change Memory Cells |
| Sub Title (in English) | |
| Keyword(1) | Phase-change Memory |
| Keyword(2) | GeSbTe |
| Keyword(3) | Oxygen doping |
| 1st Author's Name | N. Matsuzaki |
| 1st Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd.() |
| 2nd Author's Name | K. Kurotsuchi |
| 2nd Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd. |
| 3rd Author's Name | Y. Matsui |
| 3rd Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd. |
| 4th Author's Name | O. Tonomura |
| 4th Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd. |
| 5th Author's Name | N. Yamamoto |
| 5th Author's Affiliation | Kochi University of Technology |
| 6th Author's Name | Y. Fujisaki |
| 6th Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd. |
| 7th Author's Name | N. Kitai |
| 7th Author's Affiliation | Hitachi ULSI Systems Co., Ltd. |
| 8th Author's Name | R. Takemura |
| 8th Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd. |
| 9th Author's Name | K. Osada |
| 9th Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd. |
| 10th Author's Name | S. Hanzawa |
| 10th Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd. |
| 11th Author's Name | H. Moriya |
| 11th Author's Affiliation | Hitachi Mechanical Engineering Research Lab., Hitachi, Ltd. |
| 12th Author's Name | T. Iwasaki |
| 12th Author's Affiliation | Hitachi Mechanical Engineering Research Lab., Hitachi, Ltd. |
| 13th Author's Name | T. Kawahara |
| 13th Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd. |
| 14th Author's Name | N. Takaura |
| 14th Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd. |
| 15th Author's Name | M. Terao |
| 15th Author's Affiliation | Hitachi Central Research Laboratory, Hitachi, Ltd. |
| 16th Author's Name | M. Matsuoka |
| 16th Author's Affiliation | Renesas Technology Corp. |
| 17th Author's Name | M. Moniwa |
| 17th Author's Affiliation | Renesas Technology Corp. |
| Date | 2006/3/7 |
| Paper # | SDM2005-260 |
| Volume (vol) | vol.105 |
| Number (no) | 654 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |