| Presentation | 2006/3/7 Crystal and surface structures of GST film and phase-change controlability of lateral type GST phase-change resistor Sumio HOSAKA, Akihira MIYACHI, You YIN, Daisuke NIIDA, Hayato SONE, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have studied crystal and surface structures of GeSbTe (GST) film using XRD (X ray diffraction) and UHV nc-AFM (Ultrahigh vaccum noncontact mode atomic force microscopy), and have also studied a phase-change controlability of the lateral type GST phase change resistor. As the experimental results, we obtained some knowledge as follows: (1) In annealing process, crystallizing of GST film is FCC structure over 150℃ and then to HEX structure over 335℃ using XRD spectra. (2) Observations of the GST film surfaces have been done by UHV nc-AFM. The observation made it clear that the grain sizes and roughness of the film change before and after annealing. (3) The controlability depends on the phase change resistor size, especially, length and film thickness. (4) The critical phsase change power was 1 or 2 orders magnitude of smaller than the vertical type phase change resistor. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Phase change memory / phase change material / GeSbTe / PRAM / Nonvolatile memory / nc-AFM / XRD |
| Paper # | SDM2005-259 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/3/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Crystal and surface structures of GST film and phase-change controlability of lateral type GST phase-change resistor |
| Sub Title (in English) | |
| Keyword(1) | Phase change memory |
| Keyword(2) | phase change material |
| Keyword(3) | GeSbTe |
| Keyword(4) | PRAM |
| Keyword(5) | Nonvolatile memory |
| Keyword(6) | nc-AFM |
| Keyword(7) | XRD |
| 1st Author's Name | Sumio HOSAKA |
| 1st Author's Affiliation | Graduate School of Engineering, Gunma University() |
| 2nd Author's Name | Akihira MIYACHI |
| 2nd Author's Affiliation | Graduate School of Engineering, Gunma University |
| 3rd Author's Name | You YIN |
| 3rd Author's Affiliation | SVBL, Gunma University |
| 4th Author's Name | Daisuke NIIDA |
| 4th Author's Affiliation | Graduate School of Engineering, Gunma University |
| 5th Author's Name | Hayato SONE |
| 5th Author's Affiliation | Graduate School of Engineering, Gunma University |
| Date | 2006/3/7 |
| Paper # | SDM2005-259 |
| Volume (vol) | vol.105 |
| Number (no) | 654 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |