| Presentation | 2006/3/7 Three Terminal Solid-Electrolyte Nanometer Switch Toshitsugu SAKAMOTO, Nanoki BANNO, Noriyuki IGUCHI, Shunichi KAERIYAMA, Masayuki MIZUNO, Hisao KAWAURA, Tsuyoshi HASEGAWA, Kazuya TERABE, Masakazu AONO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We propose a three-terminal solid-electrolyte nanometer switch, where the control gate is separated from the current path. This novel switch resolves the issues arising from large current during switching (>1mA) in a two-terminal solid-electrolyte switch. We demonstrate that the drain current reversibly switches when a metallic bridge electrochemically forms or dissolves between the source and drain by applying gate voltage. The ON resistance is 200-300Ω and the ON/OFF current ratio is as high as 10^5. Each state is nonvolatile. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | solid electrolyte / nano device / electrochemical reaction / nonvolatile memory |
| Paper # | SDM2005-261 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/3/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Three Terminal Solid-Electrolyte Nanometer Switch |
| Sub Title (in English) | |
| Keyword(1) | solid electrolyte |
| Keyword(2) | nano device |
| Keyword(3) | electrochemical reaction |
| Keyword(4) | nonvolatile memory |
| 1st Author's Name | Toshitsugu SAKAMOTO |
| 1st Author's Affiliation | Fundamental & Enviromental Research Labs., NEC Corp.:Japan Science and Technology Agency() |
| 2nd Author's Name | Nanoki BANNO |
| 2nd Author's Affiliation | Fundamental & Enviromental Research Labs., NEC Corp.:Japan Science and Technology Agency |
| 3rd Author's Name | Noriyuki IGUCHI |
| 3rd Author's Affiliation | Fundamental & Enviromental Research Labs., NEC Corp. |
| 4th Author's Name | Shunichi KAERIYAMA |
| 4th Author's Affiliation | System Device Labs., NEC Corp. |
| 5th Author's Name | Masayuki MIZUNO |
| 5th Author's Affiliation | System Device Labs., NEC Corp. |
| 6th Author's Name | Hisao KAWAURA |
| 6th Author's Affiliation | Fundamental & Enviromental Research Labs., NEC Corp. |
| 7th Author's Name | Tsuyoshi HASEGAWA |
| 7th Author's Affiliation | National Institute for Materials Science:Japan Science and Technology Agency |
| 8th Author's Name | Kazuya TERABE |
| 8th Author's Affiliation | National Institute for Materials Science:Japan Science and Technology Agency |
| 9th Author's Name | Masakazu AONO |
| 9th Author's Affiliation | National Institute for Materials Science:Japan Science and Technology Agency |
| Date | 2006/3/7 |
| Paper # | SDM2005-261 |
| Volume (vol) | vol.105 |
| Number (no) | 654 |
| Page | pp.pp.- |
| #Pages | 4 |
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