| Presentation | 2006/3/7 Reversible Resistive Switching in the Ferroelectrics Yoshito JIN, Hideaki SAKAI, Hiroyuki SHINOJIMA, Masaru SHIMADA, Youichi ENOMOTO, Mikiho KIUCHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have found that reversible resistive switching occurs at room temperature in a Bi_4Ti_3O_<12> thin film deposited by electron cyclotron resonance sputtering. The resistive switching was observed in several stacked capacitor structures regardless of the combination of top and bottom electrodes. The large magnitude of the resistance ratio in low-resistance and high-resistance states, reversible switching with voltage pulses, and long-term retention characteristics are described. Resistance in the low-resistance state hardly depended on neither the area of the electrode pad nor the thickness of bismuth titanate films. We also investigated that the correlation between resistive switching and ferroelectricity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | reversible resistive switching / high-resistance state / low-resistance state / bismuth titanate / electron cyclotron resonance sputter deposition / stack capacitance structure |
| Paper # | SDM2005-262 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/3/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reversible Resistive Switching in the Ferroelectrics |
| Sub Title (in English) | |
| Keyword(1) | reversible resistive switching |
| Keyword(2) | high-resistance state |
| Keyword(3) | low-resistance state |
| Keyword(4) | bismuth titanate |
| Keyword(5) | electron cyclotron resonance sputter deposition |
| Keyword(6) | stack capacitance structure |
| 1st Author's Name | Yoshito JIN |
| 1st Author's Affiliation | Microsisystem Integration Laboratories, Nippon Telegrph and Telephone Corporation() |
| 2nd Author's Name | Hideaki SAKAI |
| 2nd Author's Affiliation | Microsisystem Integration Laboratories, Nippon Telegrph and Telephone Corporation |
| 3rd Author's Name | Hiroyuki SHINOJIMA |
| 3rd Author's Affiliation | Microsisystem Integration Laboratories, Nippon Telegrph and Telephone Corporation |
| 4th Author's Name | Masaru SHIMADA |
| 4th Author's Affiliation | Microsisystem Integration Laboratories, Nippon Telegrph and Telephone Corporation |
| 5th Author's Name | Youichi ENOMOTO |
| 5th Author's Affiliation | NTT Advanced Technology Corporation |
| 6th Author's Name | Mikiho KIUCHI |
| 6th Author's Affiliation | NTT AFTY Corporation |
| Date | 2006/3/7 |
| Paper # | SDM2005-262 |
| Volume (vol) | vol.105 |
| Number (no) | 654 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |