| Presentation | 2006/3/7 Development of high-density MRAM technologies : Expanding writing margin realized by a novel MTJ shape and a precisely controlled MTJ etching Masatoshi YOSHIKAWA, Hiroaki YODA, Tadashi KAI, Yoshiaki ASAO, Sumio IKEGAWA, Kenji TSUCHIDA, Hiromitsu HADA, Shuichi TAHARA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Excellent bit yields of more than 99.9998% were successfully obtained for 1M-MTJ MRAM (1Mega-Magnetoresistive Tunneling Junction Magnetoresistive Random Access Memory), which was integrated on 0.13μm CMOS circuits. Expanding of writing margin and reduction of switching field distribution were realized by a novel MTJ shape and a precisely controlled MTJ etching technique. Additionally, a yoke wire reducing a writing current by 40% and a self-aligned MTJ fabrication process for shrinkage of a cell size to 8F^2 were developed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MRAM / MTJ / MTJ shape / Yoke wire / MTJ etching / Stray field / Switching field distribution |
| Paper # | SDM2005-264 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2006/3/7(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Development of high-density MRAM technologies : Expanding writing margin realized by a novel MTJ shape and a precisely controlled MTJ etching |
| Sub Title (in English) | |
| Keyword(1) | MRAM |
| Keyword(2) | MTJ |
| Keyword(3) | MTJ shape |
| Keyword(4) | Yoke wire |
| Keyword(5) | MTJ etching |
| Keyword(6) | Stray field |
| Keyword(7) | Switching field distribution |
| 1st Author's Name | Masatoshi YOSHIKAWA |
| 1st Author's Affiliation | Corporate Research and Development Center, Toshiba Corporation() |
| 2nd Author's Name | Hiroaki YODA |
| 2nd Author's Affiliation | Corporate Research and Development Center, Toshiba Corporation |
| 3rd Author's Name | Tadashi KAI |
| 3rd Author's Affiliation | Corporate Research and Development Center, Toshiba Corporation |
| 4th Author's Name | Yoshiaki ASAO |
| 4th Author's Affiliation | Corporate Research and Development Center, Toshiba Corporation |
| 5th Author's Name | Sumio IKEGAWA |
| 5th Author's Affiliation | Corporate Research and Development Center, Toshiba Corporation |
| 6th Author's Name | Kenji TSUCHIDA |
| 6th Author's Affiliation | Corporate Research and Development Center, Toshiba Corporation |
| 7th Author's Name | Hiromitsu HADA |
| 7th Author's Affiliation | System Devices Research Laboratories, NEC Corporation |
| 8th Author's Name | Shuichi TAHARA |
| 8th Author's Affiliation | System Devices Research Laboratories, NEC Corporation |
| Date | 2006/3/7 |
| Paper # | SDM2005-264 |
| Volume (vol) | vol.105 |
| Number (no) | 654 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |