エレクトロニクス-電子デバイス(開催日：2008/07/02)

タイトル/著者/発表日/資料番号
Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)

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[発表日]2008/7/2
[資料番号]ED2008-77,SDM2008-96
Emission of terahertz radiation from InGaP/InGaAs/GaAs grating-bicoupled plasmon-resonant nano-transistors(Session7: Millimeter-wave and Terahertz Devices)

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[発表日]2008/7/2
[資料番号]ED2008-78,SDM2008-97
Three-Dimensional (3D) Integration of A Log Spiral Antenna for High-Directivity Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)

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[発表日]2008/7/2
[資料番号]ED2008-79,SDM2008-98
Spectral Narrowing Effect of a Novel Super-Grating Dual-Gate Structure for Plasmon-Resonant Terahertz Emitter(Session7: Millimeter-wave and Terahertz Devices)

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[発表日]2008/7/2
[資料番号]ED2008-80,SDM2008-99
Performance Prediction of Deep Sub-nH Inductors for Millimeter-Wave Applications(Session7: Millimeter-wave and Terahertz Devices)

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[発表日]2008/7/2
[資料番号]ED2008-81,SDM2008-100
Novel Concept Dynamic Feedback MCML Technique for High-Speed and High-Gain MCML type D-Flip Flop(Session8A: Si Devices III)

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[発表日]2008/7/2
[資料番号]ED2008-82,SDM2008-101
Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III)

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[発表日]2008/7/2
[資料番号]ED2008-83,SDM2008-102
Implementation of Channel Thermal Noise Model in CMOS RFIC Design(Session8A: Si Devices III)

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[発表日]2008/7/2
[資料番号]ED2008-84,SDM2008-103
CMOS digitally controlled programmable gain amplifier (PGA) with DC offset cancellation(Session8A: Si Devices III)

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[発表日]2008/7/2
[資料番号]ED2008-85,SDM2008-104
CMOS phase-shift oscillator using the conduction of heat(Session8A: Si Devices III)

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[発表日]2008/7/2
[資料番号]ED2008-86,SDM2008-105
Chip design of a Successive Approximation A/D Converter for a Structure Monitoring System(Session8A: Si Devices III)

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[発表日]2008/7/2
[資料番号]ED2008-87,SDM2008-106
Chip Design of Structure Monitoring Sensor Driving IC for Telemetrics Applications(Session8A: Si Devices III)

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[発表日]2008/7/2
[資料番号]ED2008-88,SDM2008-107
The data analysis technique of the atomic force microscopy for the atomically flat silicon surface(Session9A: Silicon Devices IV)

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[発表日]2008/7/2
[資料番号]ED2008-89,SDM2008-108
Electrical Properties of Highly Crystallized Ge : H Thin Films Grown from VHF Inductively-Coupled Plasma of H_2-diluted GeH_4(Session9A: Silicon Devices IV)

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[発表日]2008/7/2
[資料番号]ED2008-90,SDM2008-109
Study on Gate Around Transistor (GAT) Layout for Radiation Hardness(Session9A: Silicon Devices IV)

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[発表日]2008/7/2
[資料番号]ED2008-91,SDM2008-110
Low power pixel-level ADC for a micro-bolometer(Session9A: Silicon Devices IV)

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[発表日]2008/7/2
[資料番号]ED2008-92,SDM2008-111
A 425MHz Narrow Channel Spacing Frequency Synthesizer(Session9A: Silicon Devices IV)

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[発表日]2008/7/2
[資料番号]ED2008-93,SDM2008-112
A Novel 800mV Reference Current Source Circuit for Low-Power Low-Voltage Mixed-Mode Systems(Session9A: Silicon Devices IV)

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[発表日]2008/7/2
[資料番号]ED2008-94,SDM2008-113
A Novel 900mV Single-Stage Class-AB Amplifier for a Σ-Δ Modulator with the Switched-Opamp Technique(Session9A: Silicon Devices IV)

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[発表日]2008/7/2
[資料番号]ED2008-95,SDM2008-114
24GHz Low Noise Amplifier Design in 65nm CMOS Technology with Inter-Stage Matching Optimization(Session8B: High-Frequency, Photonic and Sensing Devices)

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[発表日]2008/7/2
[資料番号]ED2008-96,SDM2008-115
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