講演名 2008-07-11
Low power pixel-level ADC for a micro-bolometer(Session9A: Silicon Devices IV)
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抄録(和)
抄録(英) A new ROIC (readout circuit) employing current skimming for application in a micro-bolometer array is presented. The proposed circuit lowers the power consumption for a pixel-level ADC (analog to digital converter). The IR current of a micro-bolometer is proportional to resistivity changes of the micro-bolometer. Thus, the required number of counter operations for the ADC can be determined according to the micro-bolometer current variation. The counting number precisely determines how much infrared flux is absorbed. For this performance, normally a 14bit counter is used. By adopting the proposed current skimming scheme, however, the total bits for the counter can be reduced to 12bits. This is because DC offsets caused by the device non-uniformity generated from the ROIC fabrication process can be reduced by the current skimming. Therefore, only a 12bit counter is required for a pixel-level ADC. Due to the proposed mechanism, the overall power consumption in the counter will be reduced by up to 1/4 compared to the conventional structure. This low power approach is expected to see wide application in pixel level ADCs for micro-bolometers.
キーワード(和)
キーワード(英) ROIC / pixel-level ADC / counter / current skimming
資料番号 ED2008-92,SDM2008-111
発行日

研究会情報
研究会 ED
開催期間 2008/7/2(から1日開催)
開催地(和)
開催地(英)
テーマ(和)
テーマ(英)
委員長氏名(和)
委員長氏名(英)
副委員長氏名(和)
副委員長氏名(英)
幹事氏名(和)
幹事氏名(英)
幹事補佐氏名(和)
幹事補佐氏名(英)

講演論文情報詳細
申込み研究会 Electron Devices (ED)
本文の言語 ENG
タイトル(和)
サブタイトル(和)
タイトル(英) Low power pixel-level ADC for a micro-bolometer(Session9A: Silicon Devices IV)
サブタイトル(和)
キーワード(1)(和/英) / ROIC
第 1 著者 氏名(和/英) / Dong-Heon Ha
第 1 著者 所属(和/英)
School of Electrical Engineering and Computer Science, Division of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST)
発表年月日 2008-07-11
資料番号 ED2008-92,SDM2008-111
巻番号(vol) vol.108
号番号(no) 121
ページ範囲 pp.-
ページ数 4
発行日