講演名 | 2008-07-11 Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III) , |
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抄録(和) | |
抄録(英) | We propose Current Controlled MOS Current Mode Logic (CC-MCML) and have succeeded in fabricating CC-MCML with 180nm CMOS technology for the first time. The performance stability of the CC-MCML inverter on the fluctuations of threshold voltage of NMOS and PMOS is evaluated from the viewpoint of diminishing the bias offset voltage ΔV_B. The ΔV_B, that is defined as (base voltage of output waveform)-(base voltage of input waveform), is a key design parameter because CC-MCML is one type of differential circuit. It is shown that when the threshold voltage of NMOS fluctuates from -70mV to 50mV, and threshold voltage of PMOS fluctuates from -60mV to 60mV, the CC-MCML technique is able to suppress ΔV_B within only 45mV where as the conventional MCML technique caused a maximum ΔV_B of 395mV. In this paper, it is verified for the first time that the proposed CC-MCML is more tolerant against the fluctuations of threshold voltages than the conventional MCML. |
キーワード(和) | |
キーワード(英) | Current Controlled-MCML / MCML / Vth Fluctuation / Stability / NMOS / PMOS |
資料番号 | ED2008-83,SDM2008-102 |
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研究会情報 | |
研究会 | ED |
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開催期間 | 2008/7/2(から1日開催) |
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講演論文情報詳細 | |
申込み研究会 | Electron Devices (ED) |
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本文の言語 | ENG |
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サブタイトル(和) | |
タイトル(英) | Impact of 180nm Current Controlled MCML for Realizing Stable Circuit Operations under Threshold Voltage Fluctuations(Session8A: Si Devices III) |
サブタイトル(和) | |
キーワード(1)(和/英) | / Current Controlled-MCML |
第 1 著者 氏名(和/英) | / Masashi KAMIYANAGI |
第 1 著者 所属(和/英) | Center for Interdisciplinary Research, Tohoku University |
発表年月日 | 2008-07-11 |
資料番号 | ED2008-83,SDM2008-102 |
巻番号(vol) | vol.108 |
号番号(no) | 121 |
ページ範囲 | pp.- |
ページ数 | 6 |
発行日 |