Information and Systems-Image Engineering(Date:2019/10/23)

Presentation
[Invited Talk] Atomic layer etching process utilizing plasma

Sho Kumakura(Tokyo Electron Miyagi),  Yoshihide Kihara(Tokyo Electron Miyagi),  Masanobu Honda(Tokyo Electron Miyagi),  

[Date]2019-10-23
[Paper #]SDM2019-53
Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application

Min Gee Kim(Tokyo Tech.),  Masakazu Kataoka(Tokyo Tech.),  Masaki Hayashi(Tokyo Tech.),  Rengie Mark D. Mailig(Tokyo Tech.),  Shun-ichiro Ohmi(Tokyo Tech.),  

[Date]2019-10-23
[Paper #]SDM2019-56
A study on the EOT scaling of the Hf-based MONOS non-volatile memory characteristics utilizing HfON tunneling layer

Jooyoung Pyo(Tokyo Tech.),  Yusuke Horiuchi(Tokyo Tech.),  Shun-ichiro Ohmi(Tokyo Tech.),  

[Date]2019-10-23
[Paper #]SDM2019-57
Investigation of the multi-level operation of Hf-based MONOS nonvolatile memory utilizing multi charge trapping layers

Yusuke Horiuchi(Tokyo Tech.),  Jooyoung Pyo(Tokyo Tech.),  Shun-ichiro Ohmi(Tokyo Tech.),  

[Date]2019-10-23
[Paper #]SDM2019-58
A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer

Masakazu Kataoka(Tokyo Tech),  Masaki Hayashi(Tokyo Tech),  Min Gee Kim(Tokyo Tech),  Shun-ichiro Ohmi(Tokyo Tech),  

[Date]2019-10-23
[Paper #]SDM2019-54
The investigation of interface property of N-doped LaB6/SiO2/Si(100) stack structure by increasing deposition temperature

Kyung Eun Park(Tokyo Tech),  Hideki Kamata(Tokyo Tech),  Shun-ichiro Ohmi(Tokyo Tech),  

[Date]2019-10-23
[Paper #]SDM2019-55
[Invited Talk] NiAl as Cu alternative for ultrasmall feature sizes

Linghan Chen(Tohoku Univ.),  Junichi Koike(Tohoku Univ.),  Daisuke Ando(Tohoku Univ.),  Yuji Sutou(Tohoku Univ.),  

[Date]2019-10-24
[Paper #]SDM2019-59
Development of super-sensitive magnetic tunnel junction based sensor

Mikihiko Oogane(Tohoku Univ.),  

[Date]2019-10-24
[Paper #]SDM2019-64
The process technology of new piezoelectric materials BiFeO3 and dependence of substrate

Fuminobu Imaizumi(NIT, Oyama College),  Rikuto Nakada(NIT, Oyama College),  

[Date]2019-10-24
[Paper #]SDM2019-63
Resistance Measurement Platform for Statistical Evaluation of Emerging Memory Materials with High Accuracy

Takeru Maeda(Tohoku Univ.),  Yuya Omura(Tohoku Univ.),  Rihito Kuroda(Tohoku Univ.),  Akinobu Teramoto(Tohoku Univ.),  Tomoyuki Suwa(Tohoku Univ.),  Shigetoshi Sugawa(Tohoku Univ.),  

[Date]2019-10-24
[Paper #]SDM2019-65
Observation of Fluctuation of Magnetron Sputtering Plasmas Using High-speed Video Camera

Shintaro Yamazaki(Tohoku Univ.),  Tetsuya Goto(Tohoku Univ.),  Manabu Suzuki(Tohoku Univ.),  Rihito Kuroda(Tohoku Univ.),  Shigetoshi Sugawa(Tohoku Univ.),  

[Date]2019-10-24
[Paper #]SDM2019-67
[Invited Talk] Random nanostructure formation and electric readout for nano-artifact metrics

Seiya Kasai(Hokkaido Univ.),  Renpeng Lu(Hokkaido Univ.),  Katsumi Shimizu(Hokkaido Univ.),  Xiang Yin(Hokkaido Univ.),  Yosuke Ueba(DNP),  Mikio Ishikawa(DNP),  Mitsuru Kitamura(DNP),  Morihisa Hoga(AIST),  Makoto Naruse(Univ. of Tokyo),  Tsutomu Matsumoto(YNU),  

[Date]2019-10-24
[Paper #]SDM2019-62
[Invited Lecture] Effect of an oxide layer at Co/Si interface on Schottky barrier height and contact resistivity

Koichi Kido(Tohoku Univ.),  Ken Sato(Tohoku Univ.),  Rihito Kuroda(Tohoku Univ.),  Daisuke Ando(Tohoku Univ.),  Yuji Suto(Tohoku Univ.),  Junichi Koike(Tohoku Univ.),  

[Date]2019-10-24
[Paper #]SDM2019-60
Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor

Keigo Takahashi(Tohoku Univ.),  Yhang Ricardo Sipauba Carvalho da Silva(Tohoku Univ.),  Rihito Kuroda(Tohoku Univ.),  Yasuyuki Fujihara(Tohoku Univ.),  Maasa Murata(Tohoku Univ.),  Hidekazu Ishii(Tohoku Univ.),  Tatsuo Morimoto(Tohoku Univ.),  Tomoyuki Suwa(Tohoku Univ.),  Akinobu Teramoto(Tohoku Univ.),  Shigetoshi Sugawa(Tohoku Univ.),  

[Date]2019-10-24
[Paper #]SDM2019-66
Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications

Rengie Mark D. Mailig(Tokyo Tech),  Yuichiro Aruga(Tokyo Tech),  Min Gee Kim(Tokyo Tech),  Shun-ichiro Ohmi(Tokyo Tech),  

[Date]2019-10-24
[Paper #]SDM2019-61