Presentation 2019-10-23
Investigation of the multi-level operation of Hf-based MONOS nonvolatile memory utilizing multi charge trapping layers
Yusuke Horiuchi, Jooyoung Pyo, Shun-ichiro Ohmi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2019-58
Date of Issue 2019-10-16 (SDM)

Conference Information
Committee SDM
Conference Date 2019/10/23(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Niche, Tohoku Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Process Science and New Process Technology
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation of the multi-level operation of Hf-based MONOS nonvolatile memory utilizing multi charge trapping layers
Sub Title (in English)
Keyword(1)
1st Author's Name Yusuke Horiuchi
1st Author's Affiliation Tokyo Institute of Technology(Tokyo Tech.)
2nd Author's Name Jooyoung Pyo
2nd Author's Affiliation Tokyo Institute of Technology(Tokyo Tech.)
3rd Author's Name Shun-ichiro Ohmi
3rd Author's Affiliation Tokyo Institute of Technology(Tokyo Tech.)
Date 2019-10-23
Paper # SDM2019-58
Volume (vol) vol.119
Number (no) SDM-239
Page pp.pp.25-28(SDM),
#Pages 4
Date of Issue 2019-10-16 (SDM)