Presentation 2019-10-24
[Invited Talk] Random nanostructure formation and electric readout for nano-artifact metrics
Seiya Kasai, Renpeng Lu, Katsumi Shimizu, Xiang Yin, Yosuke Ueba, Mikio Ishikawa, Mitsuru Kitamura, Morihisa Hoga, Makoto Naruse, Tsutomu Matsumoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We introduce a basic concept of nano-artifact metrics, expected to be a highly secure authentication technique using nano-scale random structures. Recent development of the basic technologies for the nano-artifact metrics including formation of two-dimensional random nanostructure using a resist collapse and a novel electric readout of the formed nanostructures.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Artifact metrics / Random nanostructure / Resist collapse / Electric readout / Si MOSFET
Paper # SDM2019-62
Date of Issue 2019-10-16 (SDM)

Conference Information
Committee SDM
Conference Date 2019/10/23(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Niche, Tohoku Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Process Science and New Process Technology
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Random nanostructure formation and electric readout for nano-artifact metrics
Sub Title (in English)
Keyword(1) Artifact metrics
Keyword(2) Random nanostructure
Keyword(3) Resist collapse
Keyword(4) Electric readout
Keyword(5) Si MOSFET
1st Author's Name Seiya Kasai
1st Author's Affiliation Hokkaido University(Hokkaido Univ.)
2nd Author's Name Renpeng Lu
2nd Author's Affiliation Hokkaido University(Hokkaido Univ.)
3rd Author's Name Katsumi Shimizu
3rd Author's Affiliation Hokkaido University(Hokkaido Univ.)
4th Author's Name Xiang Yin
4th Author's Affiliation Hokkaido University(Hokkaido Univ.)
5th Author's Name Yosuke Ueba
5th Author's Affiliation Dai Nippon Printing(DNP)
6th Author's Name Mikio Ishikawa
6th Author's Affiliation Dai Nippon Printing(DNP)
7th Author's Name Mitsuru Kitamura
7th Author's Affiliation Dai Nippon Printing(DNP)
8th Author's Name Morihisa Hoga
8th Author's Affiliation National Institute of Advanced Industrial Science and Technology(AIST)
9th Author's Name Makoto Naruse
9th Author's Affiliation The University of Tokyo(Univ. of Tokyo)
10th Author's Name Tsutomu Matsumoto
10th Author's Affiliation Yokohama National University(YNU)
Date 2019-10-24
Paper # SDM2019-62
Volume (vol) vol.119
Number (no) SDM-239
Page pp.pp.45-50(SDM),
#Pages 6
Date of Issue 2019-10-16 (SDM)