| Presentation | 2019-10-23 The investigation of interface property of N-doped LaB6/SiO2/Si(100) stack structure by increasing deposition temperature Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | |
| Paper # | SDM2019-55 |
| Date of Issue | 2019-10-16 (SDM) |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 2019/10/23(2days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Niche, Tohoku Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process Science and New Process Technology |
| Chair | Takahiro Shinada(Tohoku Univ.) |
| Vice Chair | Hiroshige Hirano(TowerJazz Panasonic) |
| Secretary | Hiroshige Hirano(Shizuoka Univ.) |
| Assistant | Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.) |
| Paper Information | |
| Registration To | Technical Committee on Silicon Device and Materials |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The investigation of interface property of N-doped LaB6/SiO2/Si(100) stack structure by increasing deposition temperature |
| Sub Title (in English) | |
| Keyword(1) | |
| 1st Author's Name | Kyung Eun Park |
| 1st Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 2nd Author's Name | Hideki Kamata |
| 2nd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| 3rd Author's Name | Shun-ichiro Ohmi |
| 3rd Author's Affiliation | Tokyo Institute of Technology(Tokyo Tech) |
| Date | 2019-10-23 |
| Paper # | SDM2019-55 |
| Volume (vol) | vol.119 |
| Number (no) | SDM-239 |
| Page | pp.pp.11-15(SDM), |
| #Pages | 5 |
| Date of Issue | 2019-10-16 (SDM) |