Presentation 2019-10-24
[Invited Talk] NiAl as Cu alternative for ultrasmall feature sizes
Linghan Chen, Junichi Koike, Daisuke Ando, Yuji Sutou,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Conventional Cu interconnect will suffer from a great line resistivity increase due to aggressive downscaling of the dimensions of future large-scale-integrated (LSI) devices. In this report, the possibility of NiAl as a Cu alternative for highly scaled interconnections is investigated, with interfacial reaction, diffusion-barrier property, time-dependent-dielectric-breakdown (TDDB) reliability and thickness/linewidth-dependent resistivity change being examined. The results demonstrate that NiAl is a promising interconnect material that can be used without liner or barrier layer for linewidths below 7?nm.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InterconnectNiAlCu alternativeLiner- and Barrier-freeReliability
Paper # SDM2019-59
Date of Issue 2019-10-16 (SDM)

Conference Information
Committee SDM
Conference Date 2019/10/23(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Niche, Tohoku Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Process Science and New Process Technology
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] NiAl as Cu alternative for ultrasmall feature sizes
Sub Title (in English)
Keyword(1) InterconnectNiAlCu alternativeLiner- and Barrier-freeReliability
1st Author's Name Linghan Chen
1st Author's Affiliation Tohoku University(Tohoku Univ.)
2nd Author's Name Junichi Koike
2nd Author's Affiliation Tohoku University(Tohoku Univ.)
3rd Author's Name Daisuke Ando
3rd Author's Affiliation Tohoku University(Tohoku Univ.)
4th Author's Name Yuji Sutou
4th Author's Affiliation Tohoku University(Tohoku Univ.)
Date 2019-10-24
Paper # SDM2019-59
Volume (vol) vol.119
Number (no) SDM-239
Page pp.pp.29-33(SDM),
#Pages 5
Date of Issue 2019-10-16 (SDM)