Presentation 2019-10-24
[Invited Lecture] Effect of an oxide layer at Co/Si interface on Schottky barrier height and contact resistivity
Koichi Kido, Ken Sato, Rihito Kuroda, Daisuke Ando, Yuji Suto, Junichi Koike,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English)
Keyword(in Japanese) (See Japanese page)
Keyword(in English)
Paper # SDM2019-60
Date of Issue 2019-10-16 (SDM)

Conference Information
Committee SDM
Conference Date 2019/10/23(2days)
Place (in Japanese) (See Japanese page)
Place (in English) Niche, Tohoku Univ.
Topics (in Japanese) (See Japanese page)
Topics (in English) Process Science and New Process Technology
Chair Takahiro Shinada(Tohoku Univ.)
Vice Chair Hiroshige Hirano(TowerJazz Panasonic)
Secretary Hiroshige Hirano(Shizuoka Univ.)
Assistant Takahiro Mori(AIST) / Nobuaki Kobayashi(Nihon Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Lecture] Effect of an oxide layer at Co/Si interface on Schottky barrier height and contact resistivity
Sub Title (in English)
Keyword(1)
1st Author's Name Koichi Kido
1st Author's Affiliation Tohoku University(Tohoku Univ.)
2nd Author's Name Ken Sato
2nd Author's Affiliation Tohoku University(Tohoku Univ.)
3rd Author's Name Rihito Kuroda
3rd Author's Affiliation Tohoku University(Tohoku Univ.)
4th Author's Name Daisuke Ando
4th Author's Affiliation Tohoku University(Tohoku Univ.)
5th Author's Name Yuji Suto
5th Author's Affiliation Tohoku University(Tohoku Univ.)
6th Author's Name Junichi Koike
6th Author's Affiliation Tohoku University(Tohoku Univ.)
Date 2019-10-24
Paper # SDM2019-60
Volume (vol) vol.119
Number (no) SDM-239
Page pp.pp.35-38(SDM),
#Pages 4
Date of Issue 2019-10-16 (SDM)