Electronics-Component Parts and Materials(Date:1993/09/16)

Presentation
表紙

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[Date]1993/9/16
[Paper #]
目次

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[Date]1993/9/16
[Paper #]
Polycrystalline Si and SiC thin films by plasma-CVD using SiCl_4 gas

Hiroyuki Tanaka,  Toshio Homma,  Kiichi Kamimura,  Yoshiharu Onuma,  

[Date]1993/9/16
[Paper #]CPM93-61
Stress characteristics of SiN films grown by hydrogen radicals assisted plasma CVD method

Kanji Yasui,  Kazuaki Nakanishi,  Hisashi Takahashi,  Tadashi Akahane,  

[Date]1993/9/16
[Paper #]CPM93-62
Metalorganic Chemical Vapor Deposition Growth of InN on Si and α-A l_2O_3 Substrates

Mitsunori Tsujino,  Masahiro Mizutani,  Mitsugu Ohkubo,  Akihiro Hashimoto,  Akio Yamamoto,  

[Date]1993/9/16
[Paper #]CPM93-63
Peparation of InN-In_2O_3 thin films by reactive evapration

Yuichi Sato,  Susumu Sato,  

[Date]1993/9/16
[Paper #]CPM93-64
Principle and recent progress of graphoepitaxy technology

Hideyuki Takakura,  Yoshiaki Wakabayashi,  Yoshihiro Hamakawa,  

[Date]1993/9/16
[Paper #]CPM93-65
Growth of GaSe thin film on GaAs(001)

Takayuki Izumi,  Kenichi Fujita,  Toyokazu Tanbo,  Hiromu Ueba,  Chiei Tatuyama,  

[Date]1993/9/16
[Paper #]CPM93-66
Development of high polymer solid electrolyte

Katsumi Tanino,  Tomoaki Futakuchi,  Takashi Terasawa,  Shinya Orito,  Shinsuke Yagi,  Hiroshi Takeda,  Hiroshi Maekawa,  Takashi Saito,  

[Date]1993/9/16
[Paper #]CPM93-67
Smell sensor utilizing sputtered aluminum-doped ZnO thin film

Fumitaka Endo,  Shirou Tsubakino,  Mitsuo Ikeda,  Hidehito Nanto,  

[Date]1993/9/16
[Paper #]CPM93-68
[OTHERS]

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[Date]1993/9/16
[Paper #]