| Presentation | 1993/9/16 Growth of GaSe thin film on GaAs(001) Takayuki Izumi, Kenichi Fujita, Toyokazu Tanbo, Hiromu Ueba, Chiei Tatuyama, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | III-VI layered semiconductor GaSe has been grown hetero- epitaxially on GaAs(001),and the crystalline of thin films and the interface between them have been studied by using surface analysis systems. The thin films were grown at room temperature(R.T.),250℃ and 400 ℃ as substrate temperature(Ts).The crystalline quality chemical bo nding states and crystal structure of the grown films were characterized by using low-energy electron-loss spectroscopy(LEELS),X-ray photoelectron spectroscopy(XPS)and X-ray deffraction(XRD).Though the crystal structure of GaSe is much defferent from that of GaAs(001),GaSe with a fairly good crystalline quality was successfully grown at 250℃ for the thickne ss over 30BR.By annealing at 400℃,the inprovements of the crystall ine quality were observed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaAs(001) / GaSe / layered semiconductor / Van der Waals force / hetero-epitaxal / passivation |
| Paper # | CPM93-66 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 1993/9/16(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of GaSe thin film on GaAs(001) |
| Sub Title (in English) | |
| Keyword(1) | GaAs(001) |
| Keyword(2) | GaSe |
| Keyword(3) | layered semiconductor |
| Keyword(4) | Van der Waals force |
| Keyword(5) | hetero-epitaxal |
| Keyword(6) | passivation |
| 1st Author's Name | Takayuki Izumi |
| 1st Author's Affiliation | Department of Electronics & Information Engineering,Faculty of Engineering,Toyama University() |
| 2nd Author's Name | Kenichi Fujita |
| 2nd Author's Affiliation | ADVANTEST CORPORATION |
| 3rd Author's Name | Toyokazu Tanbo |
| 3rd Author's Affiliation | Department of Electronics & Information Engineering,Faculty of Engineering,Toyama University |
| 4th Author's Name | Hiromu Ueba |
| 4th Author's Affiliation | Department of Electronics & Information Engineering,Faculty of Engineering,Toyama University |
| 5th Author's Name | Chiei Tatuyama |
| 5th Author's Affiliation | Department of Electronics & Information Engineering,Faculty of Engineering,Toyama University |
| Date | 1993/9/16 |
| Paper # | CPM93-66 |
| Volume (vol) | vol.93 |
| Number (no) | 222 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |