Presentation 1993/9/16
Polycrystalline Si and SiC thin films by plasma-CVD using SiCl_4 gas
Hiroyuki Tanaka, Toshio Homma, Kiichi Kamimura, Yoshiharu Onuma,
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Abstract(in English) Polycrystalline Silicon and silicon Carbide thin films were deposited by plasma-assisted chemical vapor deposition using SiCl_ 4 as a source gas.The method developed in this work is more safely controllable than the method using SiH_4,which has been widely used as a source gas for deposition of Si and SiC.The samples obtaind in this study,were characterized by X-ray deffraction, photo-absorption measurement and Hall effect measurement.
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Keyword(in English) Polycrystalline Si thin film / Polycrystalline SiC thin film / Plasma CVD / SiCl_4
Paper # CPM93-61
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Committee CPM
Conference Date 1993/9/16(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Polycrystalline Si and SiC thin films by plasma-CVD using SiCl_4 gas
Sub Title (in English)
Keyword(1) Polycrystalline Si thin film
Keyword(2) Polycrystalline SiC thin film
Keyword(3) Plasma CVD
Keyword(4) SiCl_4
1st Author's Name Hiroyuki Tanaka
1st Author's Affiliation Faculty of Engineering,Shinshu University()
2nd Author's Name Toshio Homma
2nd Author's Affiliation Faculty of Engineering,Shinshu University
3rd Author's Name Kiichi Kamimura
3rd Author's Affiliation Faculty of Engineering,Shinshu University
4th Author's Name Yoshiharu Onuma
4th Author's Affiliation Faculty of Engineering,Shinshu University
Date 1993/9/16
Paper # CPM93-61
Volume (vol) vol.93
Number (no) 222
Page pp.pp.-
#Pages 6
Date of Issue