Presentation | 1993/9/16 Polycrystalline Si and SiC thin films by plasma-CVD using SiCl_4 gas Hiroyuki Tanaka, Toshio Homma, Kiichi Kamimura, Yoshiharu Onuma, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Polycrystalline Silicon and silicon Carbide thin films were deposited by plasma-assisted chemical vapor deposition using SiCl_ 4 as a source gas.The method developed in this work is more safely controllable than the method using SiH_4,which has been widely used as a source gas for deposition of Si and SiC.The samples obtaind in this study,were characterized by X-ray deffraction, photo-absorption measurement and Hall effect measurement. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Polycrystalline Si thin film / Polycrystalline SiC thin film / Plasma CVD / SiCl_4 |
Paper # | CPM93-61 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1993/9/16(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Polycrystalline Si and SiC thin films by plasma-CVD using SiCl_4 gas |
Sub Title (in English) | |
Keyword(1) | Polycrystalline Si thin film |
Keyword(2) | Polycrystalline SiC thin film |
Keyword(3) | Plasma CVD |
Keyword(4) | SiCl_4 |
1st Author's Name | Hiroyuki Tanaka |
1st Author's Affiliation | Faculty of Engineering,Shinshu University() |
2nd Author's Name | Toshio Homma |
2nd Author's Affiliation | Faculty of Engineering,Shinshu University |
3rd Author's Name | Kiichi Kamimura |
3rd Author's Affiliation | Faculty of Engineering,Shinshu University |
4th Author's Name | Yoshiharu Onuma |
4th Author's Affiliation | Faculty of Engineering,Shinshu University |
Date | 1993/9/16 |
Paper # | CPM93-61 |
Volume (vol) | vol.93 |
Number (no) | 222 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |