Presentation | 1993/9/16 Peparation of InN-In_2O_3 thin films by reactive evapration Yuichi Sato, Susumu Sato, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Thin films of a mixture system of InN and In_2O_3 are deposited on α-Al_2O_3(0001) substrates by reactive evaporation in mixed nit rogen-oxygen RF plasmas.Crystal structure and electrical and optical properties of the prepared films are studied for various nitrogen and oxygen contents.C-axis oriented InN thin films are obtained for mixing ratios of oxygen under 5 %,and(111)oriented ln_ 2O_3 thin films are obtained for mixing ratios of oxygen above 20 %.Carrier densities of the films having a crystal structure of InN increase as nitrogen content decreases and oxygen content increases.Resistivities of the prepared InN -In_2O_3 thin films are varied from 10^-4> to about 1Ω・cm,and band gap energies of th em are varied from 1.9 to 3.7 eV. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InN,In_2O_3 / thin film / crystal structure / electrical property / optical property |
Paper # | CPM93-64 |
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Conference Information | |
Committee | CPM |
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Conference Date | 1993/9/16(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Peparation of InN-In_2O_3 thin films by reactive evapration |
Sub Title (in English) | |
Keyword(1) | InN,In_2O_3 |
Keyword(2) | thin film |
Keyword(3) | crystal structure |
Keyword(4) | electrical property |
Keyword(5) | optical property |
1st Author's Name | Yuichi Sato |
1st Author's Affiliation | Mining College,Akita University() |
2nd Author's Name | Susumu Sato |
2nd Author's Affiliation | Mining College,Akita University |
Date | 1993/9/16 |
Paper # | CPM93-64 |
Volume (vol) | vol.93 |
Number (no) | 222 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |