Presentation 1993/9/16
Peparation of InN-In_2O_3 thin films by reactive evapration
Yuichi Sato, Susumu Sato,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Thin films of a mixture system of InN and In_2O_3 are deposited on α-Al_2O_3(0001) substrates by reactive evaporation in mixed nit rogen-oxygen RF plasmas.Crystal structure and electrical and optical properties of the prepared films are studied for various nitrogen and oxygen contents.C-axis oriented InN thin films are obtained for mixing ratios of oxygen under 5 %,and(111)oriented ln_ 2O_3 thin films are obtained for mixing ratios of oxygen above 20 %.Carrier densities of the films having a crystal structure of InN increase as nitrogen content decreases and oxygen content increases.Resistivities of the prepared InN -In_2O_3 thin films are varied from 10^-4> to about 1Ω・cm,and band gap energies of th em are varied from 1.9 to 3.7 eV.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InN,In_2O_3 / thin film / crystal structure / electrical property / optical property
Paper # CPM93-64
Date of Issue

Conference Information
Committee CPM
Conference Date 1993/9/16(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
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Paper Information
Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Peparation of InN-In_2O_3 thin films by reactive evapration
Sub Title (in English)
Keyword(1) InN,In_2O_3
Keyword(2) thin film
Keyword(3) crystal structure
Keyword(4) electrical property
Keyword(5) optical property
1st Author's Name Yuichi Sato
1st Author's Affiliation Mining College,Akita University()
2nd Author's Name Susumu Sato
2nd Author's Affiliation Mining College,Akita University
Date 1993/9/16
Paper # CPM93-64
Volume (vol) vol.93
Number (no) 222
Page pp.pp.-
#Pages 5
Date of Issue