Presentation 1993/9/16
Stress characteristics of SiN films grown by hydrogen radicals assisted plasma CVD method
Kanji Yasui, Kazuaki Nakanishi, Hisashi Takahashi, Tadashi Akahane,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Silicon nitride films were prepared by hydrogen radical assisted plasma chemical vapor deposition using silane (SiH_4) and ammonia (NH_3) as source material.By the newton ring method,the residual stress of SiN film was measured.It was found that the residual stress was the tensile stress for N-rich films and was the compressive stress for Si-rich films.By the supply of hydrogen radicals during deposition,the hydrogen concentration in SiN films was reduced,and the tensile stress in N-rich films was relaxed to about 4×10^9dyne, cm^2.Measuring the residual stress from room tem perature to deposition temperature,the separation of that into thermal component and intrinsic component was carried out.Thermal stress depended on the hydrogen concentration in SiN films and was reduced at most to 1.7x10^9dyne/cm^2 by supplying hydrogen radicals.As the film grows,intrinsic stress decreases by,supplying hydrogen radicals.On the other hand,thermal stress does not change during the film growth.It may be concluded that the function of extraction of bonded hydrogen by hydrogen radicals does not change throughout the film growth and the reconstruction of the film structure by hydrogen radicals is carried out.
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Keyword(in English) hydrogen radicals assisted plasma CVD / SiN films / Newton ring method / residual stress
Paper # CPM93-62
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Committee CPM
Conference Date 1993/9/16(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Stress characteristics of SiN films grown by hydrogen radicals assisted plasma CVD method
Sub Title (in English)
Keyword(1) hydrogen radicals assisted plasma CVD
Keyword(2) SiN films
Keyword(3) Newton ring method
Keyword(4) residual stress
1st Author's Name Kanji Yasui
1st Author's Affiliation Department of Electrical Engineering Nagaoka University of Technology()
2nd Author's Name Kazuaki Nakanishi
2nd Author's Affiliation Department of Electrical Engineering Nagaoka University of Technology
3rd Author's Name Hisashi Takahashi
3rd Author's Affiliation Department of Electrical Engineering Nagaoka University of Technology
4th Author's Name Tadashi Akahane
4th Author's Affiliation Department of Electrical Engineering Nagaoka University of Technology
Date 1993/9/16
Paper # CPM93-62
Volume (vol) vol.93
Number (no) 222
Page pp.pp.-
#Pages 7
Date of Issue