Presentation | 1993/9/16 Metalorganic Chemical Vapor Deposition Growth of InN on Si and α-A l_2O_3 Substrates Mitsunori Tsujino, Masahiro Mizutani, Mitsugu Ohkubo, Akihiro Hashimoto, Akio Yamamoto, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Heteroepitaxial growth of InN on Si(lll)and α-Al_2O_3(0001) subs trates,as a key technology for device application of InN,has been studied using the MOCVD technique.It is found that the nitridation of substrate surfaces has important effects on the crystalline quality of grown InN films.It is revealed from RHEED and XPS analyses that silicon nitride of amorphous phase is formed before and during the growth on a Si substrate surface at a relatively low temperature(~500℃),which is the major cause for poorly-orient ed or polycrystalline InN film growth on Si substrates.Nitridation of α-Al_2O_3 surface is found to occur at a temperature higher tha n 800℃,and to bring about a remarkable improvement of heteroepitax ial InN film quality.This is because an AlN is formed and the lattice mismatch is reduced from 25% for InN, α-Al_2O_3 to 13% for InN/AlN. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | InN / MOCVD / Si / α-Al_2O_3 / epitaxy / nitridation |
Paper # | CPM93-63 |
Date of Issue |
Conference Information | |
Committee | CPM |
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Conference Date | 1993/9/16(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Metalorganic Chemical Vapor Deposition Growth of InN on Si and α-A l_2O_3 Substrates |
Sub Title (in English) | |
Keyword(1) | InN |
Keyword(2) | MOCVD |
Keyword(3) | Si |
Keyword(4) | α-Al_2O_3 |
Keyword(5) | epitaxy |
Keyword(6) | nitridation |
1st Author's Name | Mitsunori Tsujino |
1st Author's Affiliation | Faculty of Engineering,Fukui University() |
2nd Author's Name | Masahiro Mizutani |
2nd Author's Affiliation | Faculty of Engineering,Fukui University |
3rd Author's Name | Mitsugu Ohkubo |
3rd Author's Affiliation | Faculty of Engineering,Fukui University |
4th Author's Name | Akihiro Hashimoto |
4th Author's Affiliation | Faculty of Engineering,Fukui University |
5th Author's Name | Akio Yamamoto |
5th Author's Affiliation | Faculty of Engineering,Fukui University |
Date | 1993/9/16 |
Paper # | CPM93-63 |
Volume (vol) | vol.93 |
Number (no) | 222 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |