Presentation 1993/9/16
Metalorganic Chemical Vapor Deposition Growth of InN on Si and α-A l_2O_3 Substrates
Mitsunori Tsujino, Masahiro Mizutani, Mitsugu Ohkubo, Akihiro Hashimoto, Akio Yamamoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Heteroepitaxial growth of InN on Si(lll)and α-Al_2O_3(0001) subs trates,as a key technology for device application of InN,has been studied using the MOCVD technique.It is found that the nitridation of substrate surfaces has important effects on the crystalline quality of grown InN films.It is revealed from RHEED and XPS analyses that silicon nitride of amorphous phase is formed before and during the growth on a Si substrate surface at a relatively low temperature(~500℃),which is the major cause for poorly-orient ed or polycrystalline InN film growth on Si substrates.Nitridation of α-Al_2O_3 surface is found to occur at a temperature higher tha n 800℃,and to bring about a remarkable improvement of heteroepitax ial InN film quality.This is because an AlN is formed and the lattice mismatch is reduced from 25% for InN, α-Al_2O_3 to 13% for InN/AlN.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InN / MOCVD / Si / α-Al_2O_3 / epitaxy / nitridation
Paper # CPM93-63
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Committee CPM
Conference Date 1993/9/16(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Metalorganic Chemical Vapor Deposition Growth of InN on Si and α-A l_2O_3 Substrates
Sub Title (in English)
Keyword(1) InN
Keyword(2) MOCVD
Keyword(3) Si
Keyword(4) α-Al_2O_3
Keyword(5) epitaxy
Keyword(6) nitridation
1st Author's Name Mitsunori Tsujino
1st Author's Affiliation Faculty of Engineering,Fukui University()
2nd Author's Name Masahiro Mizutani
2nd Author's Affiliation Faculty of Engineering,Fukui University
3rd Author's Name Mitsugu Ohkubo
3rd Author's Affiliation Faculty of Engineering,Fukui University
4th Author's Name Akihiro Hashimoto
4th Author's Affiliation Faculty of Engineering,Fukui University
5th Author's Name Akio Yamamoto
5th Author's Affiliation Faculty of Engineering,Fukui University
Date 1993/9/16
Paper # CPM93-63
Volume (vol) vol.93
Number (no) 222
Page pp.pp.-
#Pages 6
Date of Issue