Electronics-Silicon Devices and Materials(Date:2023/08/01)

Presentation
[Invited Talk] Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET

Takumi Inaba(AIST),  Hiroshi Oka(AIST),  Hidehiro Asai(AIST),  Hiroshi Fuketa(AIST),  Shota Iizuka(AIST),  Kimihiko Kato(AIST),  Shunsuke Shitakata(AIST),  Koichi Fukuda(AIST),  Takahiro Mori(AIST),  

[Date]2023-08-01
[Paper #]SDM2023-40,ICD2023-19
[Invited Talk] Development of small-size high-resolution cyclic ADC with latest CMOS technology

Takashi Oshima(Hitachi),  Keisuke Yamamoto(Hitachi),  Goichi Ono(Hitachi),  

[Date]2023-08-01
[Paper #]SDM2023-35,ICD2023-14
Additional High-Pressure Hydrogen Annealing Improves the Cryogenic Operation of Si (110)-oriented n-MOSFETs

Shunsuke Shitakata(Keio Univ./AIST),  Hiroshi Oka(AIST),  Takumi Inaba(AIST),  Shota Iizuka(AIST),  Kimihiko Kato(AIST),  Takahiro Mori(AIST),  

[Date]2023-08-01
[Paper #]SDM2023-41,ICD2023-20
[Invited Talk] Research Trends in Low Power Sensors and Wireless Technology

Shiro Dosho(TIT),  Noboru Ishihara(TIT),  Hiroyuki Ito(TIT),  

[Date]2023-08-01
[Paper #]SDM2023-39,ICD2023-18
Analysis of back bias effects and history phenomena in cryo 200nm SOIMOSFETs

Ryusei Ri(KIT),  Takayuki Mori(KIT),  Hiroshi Oka(AIST),  Takahiro Mori(AIST),  Jiro Ida(KIT),  

[Date]2023-08-01
[Paper #]SDM2023-42,ICD2023-21
Evaluation on Flip-Chip Packaging for Quantum Computers at Cryogenic Temperature

Misato Taguchi(Kobe Univ.),  Ryozo Takahashi(Kobe Univ.),  Masako Kato(Hitachi, Ltd),  Nobuhiro Kusuno(Hitachi, Ltd),  Takuji Miki(Kobe Univ.),  Makoto Nagata(Kobe Univ.),  

[Date]2023-08-01
[Paper #]SDM2023-37,ICD2023-16
[Invited Talk] R and D of Low Power Semiconductor Technology and It's Application Expansions

Koichiro Ishibashi(UEC),  

[Date]2023-08-01
[Paper #]SDM2023-38,ICD2023-17
A research on a cryogenic ADC for acquisition of environmental noise near quantum devices.

Tomoya Yamada(Kobe Univ.),  Ryozo Takahashi(Kobe Univ.),  Takuji Miki(Kobe Univ.),  Makoto Nagata(Kobe Univ.),  

[Date]2023-08-01
[Paper #]SDM2023-36,ICD2023-15
A 1W/8R 20T SRAM Codebook for Deep Learning Processors to Reduce Main Memory Bandwidth

Ryotaro Ohara(Kobe Univ),  Masaya Kabuto(Kobe Univ),  Masakazu Taichi(Kobe Univ),  Atsushi Fukunaga(Kobe Univ),  Yuto Yasuda(Kobe Univ),  Riku Hamabe(Kobe Univ),  Shintaro Izumi(Kobe Univ),  Hiroshi Kawaguchi(Kobe Univ),  

[Date]2023-08-02
[Paper #]SDM2023-44,ICD2023-23
[Invited Talk] A 33kDMIPS 6.4W Vehicle Communication Gateway Processor Achieving 10Gbps/W Network Routing, 40ms CAN Bus Start-Up and 1.4mW Standby

Kenichi Shimada(Renesas),  Keiichiro Sano(Renesas),  Kazuki Fukuoka(Renesas),  Hiroshi Morita(Renesas),  Masayuki Daito(Renesas),  Tatsuya Kamei(Renesas),  Hiroyuki Hamasaki(Renesas),  Yasuhisa Shimazaki(Renesas),  

[Date]2023-08-02
[Paper #]SDM2023-43,ICD2023-22
[Invited Talk] A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices

Masaharu Kobayashi(Univ. Tokyo),  Kaito Hikake(Univ. Tokyo),  Zhuo Li(Univ. Tokyo),  Junxiang Hao(Univ. Tokyo),  Chitra Pandy(Univ. Tokyo),  Takuya Saraya(Univ. Tokyo),  Toshiro Hiramoto(Univ. Tokyo),  Takanori Takahashi(NAIST),  Mutsunori Uenuma(NAIST),  Yukiharu Uraoka(NAIST),  

[Date]2023-08-02
[Paper #]SDM2023-45,ICD2023-24
[Invited Talk] Technology Trends in CMOS Devices for Advanced Logic LSIs

Hitoshi Wakabayashi(Tokyo Tech),  

[Date]2023-08-02
[Paper #]SDM2023-46,ICD2023-25
Multi-Output MOSFET for Standard Sensor/Circuit Design Platform Device

Tomochika Harada(Yamagata University),  

[Date]2023-08-02
[Paper #]SDM2023-47,ICD2023-26
[Invited Talk] Current issue & development prospects for 2D layered material devices

Kosuke Nagashio(UTokyo),  

[Date]2023-08-03
[Paper #]SDM2023-48,ICD2023-27
Gate Driver IC with Fully Integrated Overcurrent Protection Function by Measuring Gate-to-Emitter Voltage

Haifeng Zhang(Univ. of Tokyo),  Dibo Zhang(Univ. of Tokyo),  Hiromu Yamasaki(Univ. of Tokyo),  Katsuhiro Hata(Univ. of Tokyo),  Keiji Wada(Tokyo Metropolitan Univ.),  Kan Akatsu(Yokohama National Univ.),  Ichiro Omura(Kyusyu Institute of Technology),  Makoto Takamiya(Univ. of Tokyo),  

[Date]2023-08-03
[Paper #]SDM2023-53,ICD2023-32
Real-Time Gate Current Change Gate Driver IC to Adapt to Operating Condition Variations of SiC MOSFETs

Dibo Zhang(UTokyo),  Kohei Horii(UTokyo),  Katsuhiro Hata(UTokyo),  Makoto Takamiya(UTokyo),  

[Date]2023-08-03
[Paper #]SDM2023-52,ICD2023-31
[Invited Talk] Demonstration of Recovery Annealing on 7-Bits per Cell 3D Flash Memory at Cryogenic Operation for Bit Cost Scalability and Sustainability

Yuta Aiba(KIOXIA),  Hitomi Tanaka(KIOXIA),  Fumie Kikushima(KIOXIA),  Hiroki Tanaka(KIOXIA),  Toshio Fujisawa(KIOXIA),  Hideko Mukaida(KIOXIA),  Tomoya Sanuki(KIOXIA),  

[Date]2023-08-03
[Paper #]SDM2023-49,ICD2023-28
[Invited Talk] Load Adaptive Active Gate Driver Integrated Circuit for Power Device

Shusuke Kawai(Toshiba),  Takeshi Ueno(Toshiba),  Satoshi Takaya(Toshiba),  Koutaro Miyazaki(Toshiba),  Kohei Onizuka(Toshiba Europe Limited),  Hiroaki Ishihara(Toshiba),  

[Date]2023-08-03
[Paper #]SDM2023-51,ICD2023-30
[Invited Talk] Energy Field, Computer Shape

Noriyuki Miura(Osaka Univ.),  

[Date]2023-08-03
[Paper #]SDM2023-50,ICD2023-29