Presentation 2023-08-01
[Invited Talk] R and D of Low Power Semiconductor Technology and It's Application Expansions
Koichiro Ishibashi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) LSI density has been doubling every two years for 64 years, since Moore’s law started in 1959. The presenter began researching integrated circuits in his graduation research in 1980. Since then, he has worked on research and development of semiconductor devices, LSI design, low-power technology development for LSI, and applied technology of low-power semiconductors for 43 years. In other words, he spent almost two-thirds of Moore's law period in research and development of low-power semiconductor technology. In this lecture, he will look back on the research and development of low-power semiconductor technology over the past 43 years, and introduce my former teachers and people who were involved in the development together, as well as their respective research and developments, while mixing episodes and industrial significance..
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Semiconductor Devices / Low Power LSI Design / Applications of Low Power LSIs
Paper # SDM2023-38,ICD2023-17
Date of Issue 2023-07-25 (SDM, ICD)

Conference Information
Committee SDM / ICD / ITE-IST
Conference Date 2023/8/1(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Hokkaido Univ. Multimedia Education Bldg. 3F
Topics (in Japanese) (See Japanese page)
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications
Chair Shunichiro Ohmi(Tokyo Inst. of Tech.) / Makoto Ikeda(Univ. of Tokyo) / Masayuki Ikebe(Hokkaido Univ.)
Vice Chair Tatsuya Usami(Rapidus) / Hayato Wakabayashi(Sony Semiconductor Solutions) / Takashi Komuro(Saitama Univ.) / Kazuhiro Shimonomura(Ritsmeikan Univ.) / Keiichiro Kagawa(Shizuoka Univ.)
Secretary Tatsuya Usami(Tohoku Univ.) / Hayato Wakabayashi(Panasonic) / Takashi Komuro(Kioxia) / Kazuhiro Shimonomura(Shinshu Univ.) / Keiichiro Kagawa(Tokyo Inst. of Tech.)
Assistant Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital) / Ryo Shirai(Kyoto Univ.) / Jun Shiomi(Osaka Univ.) / Takeshi Kuboki(Sony Semiconductor Solutions) / Junichi Akita(Kanazawa Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] R and D of Low Power Semiconductor Technology and It's Application Expansions
Sub Title (in English) Review R and D of Semiconductor device and LSI for these 43 years
Keyword(1) Semiconductor Devices
Keyword(2) Low Power LSI Design
Keyword(3) Applications of Low Power LSIs
1st Author's Name Koichiro Ishibashi
1st Author's Affiliation The Univeristy of Electro-Communications(UEC)
Date 2023-08-01
Paper # SDM2023-38,ICD2023-17
Volume (vol) vol.123
Number (no) SDM-143,ICD-144
Page pp.pp.14-15(SDM), pp.14-15(ICD),
#Pages 2
Date of Issue 2023-07-25 (SDM, ICD)