Presentation 2023-08-01
[Invited Talk] Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The assignment of low-frequency noise sources in the cryogenic operation of MOSFET is of great importance because of the increasing demands of such devices for qubits controllers. This report analyzed the temperature dependence of random telegraph noise in short-channel bulk MOSFET to reveal the low-frequency noise sources. As a result, the noise sources transit from inner-oxide traps to interface traps with decreasing temperature. Furthermore, band-edge localized states, located right on the interface and have energy levels aligned to the band edge, are confirmed to be responsible for the noise at a few K.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Cryo-CMOS / Quantum Computer / Random Telegraph Noise / Silicon
Paper # SDM2023-40,ICD2023-19
Date of Issue 2023-07-25 (SDM, ICD)

Conference Information
Committee SDM / ICD / ITE-IST
Conference Date 2023/8/1(3days)
Place (in Japanese) (See Japanese page)
Place (in English) Hokkaido Univ. Multimedia Education Bldg. 3F
Topics (in Japanese) (See Japanese page)
Topics (in English) Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications
Chair Shunichiro Ohmi(Tokyo Inst. of Tech.) / Makoto Ikeda(Univ. of Tokyo) / Masayuki Ikebe(Hokkaido Univ.)
Vice Chair Tatsuya Usami(Rapidus) / Hayato Wakabayashi(Sony Semiconductor Solutions) / Takashi Komuro(Saitama Univ.) / Kazuhiro Shimonomura(Ritsmeikan Univ.) / Keiichiro Kagawa(Shizuoka Univ.)
Secretary Tatsuya Usami(Tohoku Univ.) / Hayato Wakabayashi(Panasonic) / Takashi Komuro(Kioxia) / Kazuhiro Shimonomura(Shinshu Univ.) / Keiichiro Kagawa(Tokyo Inst. of Tech.)
Assistant Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital) / Ryo Shirai(Kyoto Univ.) / Jun Shiomi(Osaka Univ.) / Takeshi Kuboki(Sony Semiconductor Solutions) / Junichi Akita(Kanazawa Univ.)

Paper Information
Registration To Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) [Invited Talk] Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET
Sub Title (in English)
Keyword(1) Cryo-CMOS
Keyword(2) Quantum Computer
Keyword(3) Random Telegraph Noise
Keyword(4) Silicon
1st Author's Name Takumi Inaba
1st Author's Affiliation National Institute of Advanced Industrial Science and Technologyf(AIST)
2nd Author's Name Hiroshi Oka
2nd Author's Affiliation National Institute of Advanced Industrial Science and Technologyf(AIST)
3rd Author's Name Hidehiro Asai
3rd Author's Affiliation National Institute of Advanced Industrial Science and Technologyf(AIST)
4th Author's Name Hiroshi Fuketa
4th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf(AIST)
5th Author's Name Shota Iizuka
5th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf(AIST)
6th Author's Name Kimihiko Kato
6th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf(AIST)
7th Author's Name Shunsuke Shitakata
7th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf(AIST)
8th Author's Name Koichi Fukuda
8th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf(AIST)
9th Author's Name Takahiro Mori
9th Author's Affiliation National Institute of Advanced Industrial Science and Technologyf(AIST)
Date 2023-08-01
Paper # SDM2023-40,ICD2023-19
Volume (vol) vol.123
Number (no) SDM-143,ICD-144
Page pp.pp.22-27(SDM), pp.22-27(ICD),
#Pages 6
Date of Issue 2023-07-25 (SDM, ICD)