Presentation | 2023-08-01 [Invited Talk] Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori, |
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PDF Download Page | PDF download Page Link |
Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The assignment of low-frequency noise sources in the cryogenic operation of MOSFET is of great importance because of the increasing demands of such devices for qubits controllers. This report analyzed the temperature dependence of random telegraph noise in short-channel bulk MOSFET to reveal the low-frequency noise sources. As a result, the noise sources transit from inner-oxide traps to interface traps with decreasing temperature. Furthermore, band-edge localized states, located right on the interface and have energy levels aligned to the band edge, are confirmed to be responsible for the noise at a few K. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Cryo-CMOS / Quantum Computer / Random Telegraph Noise / Silicon |
Paper # | SDM2023-40,ICD2023-19 |
Date of Issue | 2023-07-25 (SDM, ICD) |
Conference Information | |
Committee | SDM / ICD / ITE-IST |
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Conference Date | 2023/8/1(3days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | Hokkaido Univ. Multimedia Education Bldg. 3F |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | Analog, Mixed Analog and Digital, RF, and Sensor Interface, Low Voltage/Low Power Techniques, Novel Devices/Circuits, and the Applications |
Chair | Shunichiro Ohmi(Tokyo Inst. of Tech.) / Makoto Ikeda(Univ. of Tokyo) / Masayuki Ikebe(Hokkaido Univ.) |
Vice Chair | Tatsuya Usami(Rapidus) / Hayato Wakabayashi(Sony Semiconductor Solutions) / Takashi Komuro(Saitama Univ.) / Kazuhiro Shimonomura(Ritsmeikan Univ.) / Keiichiro Kagawa(Shizuoka Univ.) |
Secretary | Tatsuya Usami(Tohoku Univ.) / Hayato Wakabayashi(Panasonic) / Takashi Komuro(Kioxia) / Kazuhiro Shimonomura(Shinshu Univ.) / Keiichiro Kagawa(Tokyo Inst. of Tech.) |
Assistant | Takuji Hosoi(Kwansei Gakuin Univ.) / Takuya Futase(Western Digital) / Ryo Shirai(Kyoto Univ.) / Jun Shiomi(Osaka Univ.) / Takeshi Kuboki(Sony Semiconductor Solutions) / Junichi Akita(Kanazawa Univ.) |
Paper Information | |
Registration To | Technical Committee on Silicon Device and Materials / Technical Committee on Integrated Circuits and Devices / Technical Group on Information Sensing Technologies |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | [Invited Talk] Low-Frequency Noise Source in the Cryogenic Operation of Short-Channel Bulk MOSFET |
Sub Title (in English) | |
Keyword(1) | Cryo-CMOS |
Keyword(2) | Quantum Computer |
Keyword(3) | Random Telegraph Noise |
Keyword(4) | Silicon |
1st Author's Name | Takumi Inaba |
1st Author's Affiliation | National Institute of Advanced Industrial Science and Technologyf(AIST) |
2nd Author's Name | Hiroshi Oka |
2nd Author's Affiliation | National Institute of Advanced Industrial Science and Technologyf(AIST) |
3rd Author's Name | Hidehiro Asai |
3rd Author's Affiliation | National Institute of Advanced Industrial Science and Technologyf(AIST) |
4th Author's Name | Hiroshi Fuketa |
4th Author's Affiliation | National Institute of Advanced Industrial Science and Technologyf(AIST) |
5th Author's Name | Shota Iizuka |
5th Author's Affiliation | National Institute of Advanced Industrial Science and Technologyf(AIST) |
6th Author's Name | Kimihiko Kato |
6th Author's Affiliation | National Institute of Advanced Industrial Science and Technologyf(AIST) |
7th Author's Name | Shunsuke Shitakata |
7th Author's Affiliation | National Institute of Advanced Industrial Science and Technologyf(AIST) |
8th Author's Name | Koichi Fukuda |
8th Author's Affiliation | National Institute of Advanced Industrial Science and Technologyf(AIST) |
9th Author's Name | Takahiro Mori |
9th Author's Affiliation | National Institute of Advanced Industrial Science and Technologyf(AIST) |
Date | 2023-08-01 |
Paper # | SDM2023-40,ICD2023-19 |
Volume (vol) | vol.123 |
Number (no) | SDM-143,ICD-144 |
Page | pp.pp.22-27(SDM), pp.22-27(ICD), |
#Pages | 6 |
Date of Issue | 2023-07-25 (SDM, ICD) |