Electronics-Silicon Devices and Materials(Date:2000/01/21)

Presentation
表紙

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[Date]2000/1/21
[Paper #]
目次

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[Date]2000/1/21
[Paper #]
Performance Improvement using Triple Damascene Wiring Design Concept for 0.13μm CMOS Devices

Noriaki Oda,  Akira Matsumoto,  Takashi Yokoyama,  Takashi Ishigami,  Kouichi Motoyama,  Noboru Morita,  Kazuo Aizawa,  Koji Kishimoto,  Hideki Gomi,  

[Date]2000/1/21
[Paper #]SDM99-177
Analysis of Filling Grooves with Copper for Manufacturing Lines by Electrodeposition

Shigeki HIRASAWA,  Tatsuyuki SAITO,  Hizuru YAMAGUCHI,  

[Date]2000/1/21
[Paper #]SDM99-178
Electrical properties and adhesion of Cu/Zr/TaN layer for Cu metallization

C.J. Uchibori,  N. Shimizu,  T. Nakamura,  

[Date]2000/1/21
[Paper #]SDM99-179
Study of Electromigration Failure Mechanism in AlCu-plugged Via Structures

Kazuhiro Hoshino,  

[Date]2000/1/21
[Paper #]SDM99-180
High Temperature Sputtering Al-Plug Process with Ion-Implanted SOG Film

H. Nishimura,  K. Yamada,  H. Mizuhara,  K. Takegawa,  Y. Inoue,  K. Imai,  A. Bando,  

[Date]2000/1/21
[Paper #]SDM99-181
High speed, low power and highly reliable sub-0.1um ULSI

Shigeyoshi Watanabe,  

[Date]2000/1/21
[Paper #]SDM99-182
[OTHERS]

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[Date]2000/1/21
[Paper #]