Presentation 2000/1/21
High Temperature Sputtering Al-Plug Process with Ion-Implanted SOG Film
H. Nishimura, K. Yamada, H. Mizuhara, K. Takegawa, Y. Inoue, K. Imai, A. Bando,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this paper we present an example of high-temperature sputtering Al-Plug process. This technique is being followed with interest as a cost saving process. However, the more continuing to reduce the critical dimensions, SOG planarization process has disturbed the Al-Plug process.The main factor is the out gases from inter-layer SOG film. Therefore Al-plug process has been abandoned. Ion-implanted SOG film deters these gases. As a result, Al-plug process has put into practical use of 0.35 micron generation LSI process. Because Al-plug process can reuse by modifying a standard sputtering system, investment for equipment and utilities has been reduced. To use Al-plug process has made shorten the process flow. In addition, this process is an environment-friendly process because this technique does not use gases that contribute to global warming.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) high-temperature sputtering technique / Al-plug / ion-implantation / organic SOG / cost saving / environment-friendly
Paper # SDM99-181
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Conference Information
Committee SDM
Conference Date 2000/1/21(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High Temperature Sputtering Al-Plug Process with Ion-Implanted SOG Film
Sub Title (in English)
Keyword(1) high-temperature sputtering technique
Keyword(2) Al-plug
Keyword(3) ion-implantation
Keyword(4) organic SOG
Keyword(5) cost saving
Keyword(6) environment-friendly
1st Author's Name H. Nishimura
1st Author's Affiliation MOS-LSI Division, SANYO Electric Co., Ltd.()
2nd Author's Name K. Yamada
2nd Author's Affiliation MOS-LSI Division, SANYO Electric Co., Ltd.
3rd Author's Name H. Mizuhara
3rd Author's Affiliation Microelectronics Research Center, SANYO Electric Co., Ltd.
4th Author's Name K. Takegawa
4th Author's Affiliation MOS-LSI Division, SANYO Electric Co., Ltd.
5th Author's Name Y. Inoue
5th Author's Affiliation Microelectronics Research Center, SANYO Electric Co., Ltd.
6th Author's Name K. Imai
6th Author's Affiliation MOS-LSI Division, SANYO Electric Co., Ltd.
7th Author's Name A. Bando
7th Author's Affiliation Microelectronics Research Center, SANYO Electric Co., Ltd.
Date 2000/1/21
Paper # SDM99-181
Volume (vol) vol.99
Number (no) 579
Page pp.pp.-
#Pages 8
Date of Issue