Presentation | 2000/1/21 High Temperature Sputtering Al-Plug Process with Ion-Implanted SOG Film H. Nishimura, K. Yamada, H. Mizuhara, K. Takegawa, Y. Inoue, K. Imai, A. Bando, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | In this paper we present an example of high-temperature sputtering Al-Plug process. This technique is being followed with interest as a cost saving process. However, the more continuing to reduce the critical dimensions, SOG planarization process has disturbed the Al-Plug process.The main factor is the out gases from inter-layer SOG film. Therefore Al-plug process has been abandoned. Ion-implanted SOG film deters these gases. As a result, Al-plug process has put into practical use of 0.35 micron generation LSI process. Because Al-plug process can reuse by modifying a standard sputtering system, investment for equipment and utilities has been reduced. To use Al-plug process has made shorten the process flow. In addition, this process is an environment-friendly process because this technique does not use gases that contribute to global warming. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | high-temperature sputtering technique / Al-plug / ion-implantation / organic SOG / cost saving / environment-friendly |
Paper # | SDM99-181 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2000/1/21(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
Topics (in English) | |
Chair | |
Vice Chair | |
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Assistant |
Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | High Temperature Sputtering Al-Plug Process with Ion-Implanted SOG Film |
Sub Title (in English) | |
Keyword(1) | high-temperature sputtering technique |
Keyword(2) | Al-plug |
Keyword(3) | ion-implantation |
Keyword(4) | organic SOG |
Keyword(5) | cost saving |
Keyword(6) | environment-friendly |
1st Author's Name | H. Nishimura |
1st Author's Affiliation | MOS-LSI Division, SANYO Electric Co., Ltd.() |
2nd Author's Name | K. Yamada |
2nd Author's Affiliation | MOS-LSI Division, SANYO Electric Co., Ltd. |
3rd Author's Name | H. Mizuhara |
3rd Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
4th Author's Name | K. Takegawa |
4th Author's Affiliation | MOS-LSI Division, SANYO Electric Co., Ltd. |
5th Author's Name | Y. Inoue |
5th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
6th Author's Name | K. Imai |
6th Author's Affiliation | MOS-LSI Division, SANYO Electric Co., Ltd. |
7th Author's Name | A. Bando |
7th Author's Affiliation | Microelectronics Research Center, SANYO Electric Co., Ltd. |
Date | 2000/1/21 |
Paper # | SDM99-181 |
Volume (vol) | vol.99 |
Number (no) | 579 |
Page | pp.pp.- |
#Pages | 8 |
Date of Issue |