| Presentation | 2000/1/21 Analysis of Filling Grooves with Copper for Manufacturing Lines by Electrodeposition Shigeki HIRASAWA, Tatsuyuki SAITO, Hizuru YAMAGUCHI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Changes of copper film profiles in trenches or holes on silicon substrates during electroplating were numerically calculated. Five models of inhibition effects for additives were assumed. Electric potential distributions and concentration distributions of additives in liquid were calculated. The calculation results from a model, which assumed that the surface deposition rates depend on growth rate of the base film till that time, were similar to experimental results. Using the model, the effect of the width, the depth and the pitch of grooves and holes on changes film profiles were calculated. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Electroplating / Semiconductor / Copper Interconnects / Profile Simulation / Numerical Analysis / Additives |
| Paper # | SDM99-178 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2000/1/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Analysis of Filling Grooves with Copper for Manufacturing Lines by Electrodeposition |
| Sub Title (in English) | |
| Keyword(1) | Electroplating |
| Keyword(2) | Semiconductor |
| Keyword(3) | Copper Interconnects |
| Keyword(4) | Profile Simulation |
| Keyword(5) | Numerical Analysis |
| Keyword(6) | Additives |
| 1st Author's Name | Shigeki HIRASAWA |
| 1st Author's Affiliation | Mechanical Engineering Research Laboratory, Hitachi, Ltd., Ibaraki() |
| 2nd Author's Name | Tatsuyuki SAITO |
| 2nd Author's Affiliation | Device Development Center, Hitachi, Ltd., Tokyo |
| 3rd Author's Name | Hizuru YAMAGUCHI |
| 3rd Author's Affiliation | Device Development Center, Hitachi, Ltd., Tokyo |
| Date | 2000/1/21 |
| Paper # | SDM99-178 |
| Volume (vol) | vol.99 |
| Number (no) | 579 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |