Presentation | 2000/1/21 Electrical properties and adhesion of Cu/Zr/TaN layer for Cu metallization C.J. Uchibori, N. Shimizu, T. Nakamura, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A highly adhesive Cu interconnect structure with low resistivity has been developed by inclusion of a Zr glue layer between the Cu and an underlying TaN barrier metal layer. The mechanism of enhancement of the adhesion strength was found to be chemical and mechanical bonding between the layers by forming a thin diffused region and a roughening of both the Cu/Zr and Zr/TaN interfaces. Since the amount of diffused Zr atoms into the Cu layer was small and the effect of Zr on the resistivity of Cu was small, the resistivity of Cu/Zr/TaN was not significantly larger than that of Cu/TaN. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Cu interconnect / adhesion / barrier layer / Zr / glue layer |
Paper # | SDM99-179 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2000/1/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Electrical properties and adhesion of Cu/Zr/TaN layer for Cu metallization |
Sub Title (in English) | |
Keyword(1) | Cu interconnect |
Keyword(2) | adhesion |
Keyword(3) | barrier layer |
Keyword(4) | Zr |
Keyword(5) | glue layer |
1st Author's Name | C.J. Uchibori |
1st Author's Affiliation | Fujitsu Laboratories Ltd.() |
2nd Author's Name | N. Shimizu |
2nd Author's Affiliation | Fujitsu Laboratories Ltd. |
3rd Author's Name | T. Nakamura |
3rd Author's Affiliation | Fujitsu Laboratories Ltd. |
Date | 2000/1/21 |
Paper # | SDM99-179 |
Volume (vol) | vol.99 |
Number (no) | 579 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |