Presentation 2000/1/21
Electrical properties and adhesion of Cu/Zr/TaN layer for Cu metallization
C.J. Uchibori, N. Shimizu, T. Nakamura,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A highly adhesive Cu interconnect structure with low resistivity has been developed by inclusion of a Zr glue layer between the Cu and an underlying TaN barrier metal layer. The mechanism of enhancement of the adhesion strength was found to be chemical and mechanical bonding between the layers by forming a thin diffused region and a roughening of both the Cu/Zr and Zr/TaN interfaces. Since the amount of diffused Zr atoms into the Cu layer was small and the effect of Zr on the resistivity of Cu was small, the resistivity of Cu/Zr/TaN was not significantly larger than that of Cu/TaN.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Cu interconnect / adhesion / barrier layer / Zr / glue layer
Paper # SDM99-179
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Conference Information
Committee SDM
Conference Date 2000/1/21(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Electrical properties and adhesion of Cu/Zr/TaN layer for Cu metallization
Sub Title (in English)
Keyword(1) Cu interconnect
Keyword(2) adhesion
Keyword(3) barrier layer
Keyword(4) Zr
Keyword(5) glue layer
1st Author's Name C.J. Uchibori
1st Author's Affiliation Fujitsu Laboratories Ltd.()
2nd Author's Name N. Shimizu
2nd Author's Affiliation Fujitsu Laboratories Ltd.
3rd Author's Name T. Nakamura
3rd Author's Affiliation Fujitsu Laboratories Ltd.
Date 2000/1/21
Paper # SDM99-179
Volume (vol) vol.99
Number (no) 579
Page pp.pp.-
#Pages 7
Date of Issue