Electronics-Component Parts and Materials(Date:2001/10/19)

Presentation
表紙

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[Date]2001/10/19
[Paper #]
目次

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[Date]2001/10/19
[Paper #]
Quartz Crystal Fluid-Velocity Sensors

Kazuki Torigoe,  Mitsuo Nakazawa,  

[Date]2001/10/19
[Paper #]CPM2001-91
Manufacturing by Chemical Etching Process for The Super-Thin Grooved : Type AT-cut Quartz Crystal Resonators, And The Resonance Frequency Characteristics

Takehiko Ariizumi,  Katsutoshi Iinuma,  Kouchi Tanaka,  Katsuhiko Ariizumi,  Mitsuo Nakazawa,  

[Date]2001/10/19
[Paper #]CPM2001-92
Frequency Measurement of Super-Thin Grooved-Type(Inverse-Mesa Type) Crystal Blank with Network Analyzer

Satoru WAKAMOTO,  Takehiko ARIIZUMI,  Yoshiaki NAGAURA,  Mitsuo NAKAZAWA,  

[Date]2001/10/19
[Paper #]CPM2001-93
Impact Tolerance for The Quartz Crystal Oscillator

Asako Moriya,  Hirotake Morisaki,  Nohiro Tanaka,  Yoshiro Takahashi,  Mitsuo Nakazawa,  

[Date]2001/10/19
[Paper #]CPM2001-94
Single-Sided or Double-Sided Grooved Type Resonators Manufactured by Chemical Etching Processes of two or more steps

Yoshiaki Nagaura,  Kumiko Nagaura,  Zen-ichiro Nagaura,  Kazuhiro Kinoshita,  Kazutaka Nagato,  Kyohei Emoto,  Kazutake Imani,  Motomu Murata,  Seiichi Yokomizo,  Mitzuo Nakazawa,  

[Date]2001/10/19
[Paper #]CPM2001-95
Properties of CuInS_2 thin films sulfurized with sulfur vapor

Daisuke Makibuchi,  Yoshio Hashimoto,  Kentaro Ito,  

[Date]2001/10/19
[Paper #]CPM2001-96
Ga Doping To CuInS_2 Thin Film

Hiroyuki Goto,  Tomotake Kishida,  Tuyoshi Ohashi,  Yoshio Hashimoto,  Kentaro Ito,  

[Date]2001/10/19
[Paper #]CPM2001-97
Growth of CuInS_2 films on Si substrates toward solar cells

Koichiro OISHI,  Hironori KATAGIRI,  Satoshi KOBAYASHI,  Nozomu TSUBOI,  

[Date]2001/10/19
[Paper #]CPM2001-98
Growth of CuInS_2 on Si Wafers by Three-Sources Vacuum Evaporation Method

Masato WATANABE,  Satoshi KOBAYASHI,  Nozomu TUBOI,  Toshiyuki SEGA,  Koichiro OISHI,  Futao KANEKO,  

[Date]2001/10/19
[Paper #]CPM2001-99
Effect of buffer layer annealing on the GaN growth on sapphire substrates by MOCVD

Y. Yotsuda,  M. Sumiya,  K. Ohtuka,  K. Kuwahara,  Y. Takano,  S. Fuke,  

[Date]2001/10/19
[Paper #]CPM2001-100
Characteristics of N_2 and NH_3 Plasmas Excited by a Helical Antenna and the Properities of Surface Layer of GaAs Nitrided by Them

Kentarou KUMAZAWA,  Taturou ARAYAMA,  Shin'ichirou OKA,  Kanji YASUI,  Tadashi AKAHANE,  

[Date]2001/10/19
[Paper #]CPM2001-101
Development of chamber cleaning reducing both cost and environmental pollution by using catalytic cracking reaction of NF_3

Satoru NISHIMURA,  Atsuhsi MASUDA,  Akira IZUMI,  Hideki MATSUMURA,  

[Date]2001/10/19
[Paper #]CPM2001-102
Aim at the field effect of C60 thin films

Nobuyuki IWATA,  Keigo MUKAIMOTO,  Toshie SHIMIZU,  Hiroyuki IMAI,  Hiroshi YAMAMOTO,  

[Date]2001/10/19
[Paper #]CPM2001-103
Preparations and Evaluations of self-assembly monolayer with C_<60> derivatives

Hiroyuki Imai,  Kan Kobayashi,  Toshie Shimizu,  Nobuyuki Iwata,  Hiroshi Yamamoto,  

[Date]2001/10/19
[Paper #]CPM2001-104
Correlation between Barrier Properties and Structure of Barrier in Cu/ZrN/Si Contact System

Mayumi B. TAKEYAMA,  Takaomi ITOI,  Eiji AOYAGI,  Atsushi NOYA,  

[Date]2001/10/19
[Paper #]CPM2001-105
Effect of silicide formation for Cu diffusion in Cu/Ta-W/Si contact systems

Atsushi NOYA,  Mayumi B. TAKEYAMA,  

[Date]2001/10/19
[Paper #]CPM2001-106
Sb Adsorption on the In-induced Reconstructions of Si(111) Surface

Dimitry V. GRUZNEV,  Bommisetty V. RAO,  Yuzo FURUKAWA,  Masayuki MORI,  Toyokazu TAMBO,  Chiei TATSUYAMA,  

[Date]2001/10/19
[Paper #]CPM2001-107
Hydrogen Addition Effect on SiGe Growth by Ion-Beam Sputter Technique

K. Sasaki,  T. Ikeda,  Y. Takahashi,  T. Hata,  

[Date]2001/10/19
[Paper #]CPM2001-108
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