Presentation 2001/10/19
Ga Doping To CuInS_2 Thin Film
Hiroyuki Goto, Tomotake Kishida, Tuyoshi Ohashi, Yoshio Hashimoto, Kentaro Ito,
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Abstract(in English) We have studied roles of Ga-doping on CuInS_2 films grown from sulfurization of Cu/In/Ga precursors. Three ramp patterns of sulfurization were studied. Compound GaS as well as metal Ga was used as a Ga source. X-ray diffraction has shown that Ga doping does not change the lattice parameters. Slight amount of Ga(Ga/III=0.01), however, seems to improve the crystalinity of the CuInS_2 film. When the metal Ga is used, Ga distributes from the bottom to the top the resultant CuInS_2 film. This is much different from GaS case. In-rich hillocks are supressed by Ga or GaS doping to the preecursor.
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Keyword(in English) Solar Cell / Ga Doping / Sulphurization / CuInS_2 Thin Film
Paper # CPM2001-97
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Committee CPM
Conference Date 2001/10/19(1days)
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Registration To Component Parts and Materials (CPM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Ga Doping To CuInS_2 Thin Film
Sub Title (in English)
Keyword(1) Solar Cell
Keyword(2) Ga Doping
Keyword(3) Sulphurization
Keyword(4) CuInS_2 Thin Film
1st Author's Name Hiroyuki Goto
1st Author's Affiliation Faculty of Engineering, Shishu University()
2nd Author's Name Tomotake Kishida
2nd Author's Affiliation SHARP Corporation
3rd Author's Name Tuyoshi Ohashi
3rd Author's Affiliation Ebara Corporation
4th Author's Name Yoshio Hashimoto
4th Author's Affiliation Faculty of Engineering, Shishu University
5th Author's Name Kentaro Ito
5th Author's Affiliation Faculty of Engineering, Shishu University
Date 2001/10/19
Paper # CPM2001-97
Volume (vol) vol.101
Number (no) 395
Page pp.pp.-
#Pages 6
Date of Issue