| Presentation | 2001/10/19 Effect of buffer layer annealing on the GaN growth on sapphire substrates by MOCVD Y. Yotsuda, M. Sumiya, K. Ohtuka, K. Kuwahara, Y. Takano, S. Fuke, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Low-temperature buffer layers have been usually used for the growth of GaN on sapphire substrates by MOVPE. In this paper, the effect of buffer layer annealing-time on the characteristics of buffer layer and GaN layers grown on it was investigated considering the polarity of grown GaN layer. For the growth on nitrided substrates(N face growth), little cohesion of the buffer layer was observed and reevaporation rate was fast. Hence the crystallinity of GaN layer grown on these buffer layers changed significantly depending on the annealing time. For non-nitrided substrate(Ga face growth), GaN buffer layer reacted with the sapphire substrate and thin AlGaN buffer layer was formed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / MOCVD / sapphire substrates / GaN buffer layer / anneal / crystallinity |
| Paper # | CPM2001-100 |
| Date of Issue |
| Conference Information | |
| Committee | CPM |
|---|---|
| Conference Date | 2001/10/19(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Component Parts and Materials (CPM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of buffer layer annealing on the GaN growth on sapphire substrates by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | MOCVD |
| Keyword(3) | sapphire substrates |
| Keyword(4) | GaN buffer layer |
| Keyword(5) | anneal |
| Keyword(6) | crystallinity |
| 1st Author's Name | Y. Yotsuda |
| 1st Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University() |
| 2nd Author's Name | M. Sumiya |
| 2nd Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 3rd Author's Name | K. Ohtuka |
| 3rd Author's Affiliation | Research and Development Division, Sanken Electric Co., Ltd. |
| 4th Author's Name | K. Kuwahara |
| 4th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 5th Author's Name | Y. Takano |
| 5th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| 6th Author's Name | S. Fuke |
| 6th Author's Affiliation | Department of Electrical and Electronic Engineering, Faculty of Engineering, Shizuoka University |
| Date | 2001/10/19 |
| Paper # | CPM2001-100 |
| Volume (vol) | vol.101 |
| Number (no) | 395 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |