Presentation 2001/10/19
Hydrogen Addition Effect on SiGe Growth by Ion-Beam Sputter Technique
K. Sasaki, T. Ikeda, Y. Takahashi, T. Hata,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Effect of hydrogen on SiGe thin film preparation by ion-beam sputter technique is discussed. Using this technique well-controlled and reproducible film thickness is obtained. Ge segregates on the surface of overlaying Si layer and is mixed with the Si, so that it is impossible to obtain a abrupt Si/Ge heterointerface. This segregation was suppressed effectively by the surfactant effect of introducing hydrogen, however crystallinity of Si was found to degrade.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ion-beam sputter / SiGe / surface segregation / hydrogen surfactant
Paper # CPM2001-108
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Committee CPM
Conference Date 2001/10/19(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Hydrogen Addition Effect on SiGe Growth by Ion-Beam Sputter Technique
Sub Title (in English)
Keyword(1) Ion-beam sputter
Keyword(2) SiGe
Keyword(3) surface segregation
Keyword(4) hydrogen surfactant
1st Author's Name K. Sasaki
1st Author's Affiliation Faculty of Engineering/Graduate School of Science and Technology()
2nd Author's Name T. Ikeda
2nd Author's Affiliation Faculty of Engineering/Graduate School of Science and Technology
3rd Author's Name Y. Takahashi
3rd Author's Affiliation Faculty of Engineering/Graduate School of Science and Technology
4th Author's Name T. Hata
4th Author's Affiliation Faculty of Engineering/Graduate School of Science and Technology
Date 2001/10/19
Paper # CPM2001-108
Volume (vol) vol.101
Number (no) 395
Page pp.pp.-
#Pages 6
Date of Issue