Presentation | 2001/10/19 Hydrogen Addition Effect on SiGe Growth by Ion-Beam Sputter Technique K. Sasaki, T. Ikeda, Y. Takahashi, T. Hata, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Effect of hydrogen on SiGe thin film preparation by ion-beam sputter technique is discussed. Using this technique well-controlled and reproducible film thickness is obtained. Ge segregates on the surface of overlaying Si layer and is mixed with the Si, so that it is impossible to obtain a abrupt Si/Ge heterointerface. This segregation was suppressed effectively by the surfactant effect of introducing hydrogen, however crystallinity of Si was found to degrade. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Ion-beam sputter / SiGe / surface segregation / hydrogen surfactant |
Paper # | CPM2001-108 |
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Conference Information | |
Committee | CPM |
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Conference Date | 2001/10/19(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Component Parts and Materials (CPM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Hydrogen Addition Effect on SiGe Growth by Ion-Beam Sputter Technique |
Sub Title (in English) | |
Keyword(1) | Ion-beam sputter |
Keyword(2) | SiGe |
Keyword(3) | surface segregation |
Keyword(4) | hydrogen surfactant |
1st Author's Name | K. Sasaki |
1st Author's Affiliation | Faculty of Engineering/Graduate School of Science and Technology() |
2nd Author's Name | T. Ikeda |
2nd Author's Affiliation | Faculty of Engineering/Graduate School of Science and Technology |
3rd Author's Name | Y. Takahashi |
3rd Author's Affiliation | Faculty of Engineering/Graduate School of Science and Technology |
4th Author's Name | T. Hata |
4th Author's Affiliation | Faculty of Engineering/Graduate School of Science and Technology |
Date | 2001/10/19 |
Paper # | CPM2001-108 |
Volume (vol) | vol.101 |
Number (no) | 395 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |