エレクトロニクス-シリコン材料・デバイス(開催日：1999/07/23)

タイトル/著者/発表日/資料番号
Production-Worthy Full Process Integration of Ta_2O_5 Capacitor Technology

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[発表日]1999/7/23
[資料番号]SDM99-105
Challenge to 0.13μm Device Patterning using KrF

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[発表日]1999/7/23
[資料番号]SDM99-106
高誘電率キャパシタ内蔵GaAsRFIC

上田 大助,  

[発表日]1999/7/23
[資料番号]SDM99-107
Bottom Electrode Structures of Pt/Ru Deposited on Polycrystalline Silicon for Semiconductor Memory Capacitors

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[発表日]1999/7/23
[資料番号]SDM99-108
Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition

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[発表日]1999/7/23
[資料番号]SDM99-109
Integration of Split Word Line Ferroelectric Memories Using Etch Stopping Layers and Multi-Layer Etching Technology

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[発表日]1999/7/23
[資料番号]SDM99-110
Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures

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[発表日]1999/7/23
[資料番号]SDM99-111
A Non-destructive Readout Single Transistor FRAM with Floating Well structures

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[発表日]1999/7/23
[資料番号]SDM99-112
The Etching Behaviors of Pt/SrBi_2Ta_2O_9/NO/Si Structure for MFIS in NDRO-Type FRAM

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[発表日]1999/7/23
[資料番号]SDM99-113
Stress in Inter-level Dielectric Oxides on Integrated SBT-based Ferroelectric Memories

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[発表日]1999/7/23
[資料番号]SDM99-114
Hydrogen-Induced Degradation of Oxygen Plasma Treated Ferroelectric Pb (Zr,Ti) O_3 Capacitor

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[発表日]1999/7/23
[資料番号]SDM99-115
Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor

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[発表日]1999/7/23
[資料番号]SDM99-116
ASETにおける半導体関係の研究開発、1999年

瀬戸屋 英雄,  

[発表日]1999/7/23
[資料番号]SDM99-117
Future Semiconductor Technology & System IC 2010

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[発表日]1999/7/23
[資料番号]SDM99-118
[OTHERS]

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[発表日]1999/7/23
[資料番号]
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