講演名 | 1999/7/23 Integration of Split Word Line Ferroelectric Memories Using Etch Stopping Layers and Multi-Layer Etching Technology , |
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抄録(和) | |
抄録(英) | Split word line ferroelectric random access memories (SAVE FeRAMs) were fabricated using etch stopping layers and multi-layer etching technology. As the SWL FeRAM does not use a common CP line, the operation speed can be enhanced and the decrease of remnant polarization of non-selected cell capacitors can be prevented in write/read operation. The cell capacitors were composed of Pt electrodes and the sol-get derived Pb(Zr,Ti)O_3 films. The ferroelectric capacitors were formed by etching a metal-ferroelectric-metal (MFM) and a metal-ferroelectric (MF) using Ru and Ti masks with a good etch selectivity, which could simplify the etching process. The etch stopping layers of RuO_2 and TiO_2 were introduced to solve the over-etching problem of BPSG. The degradation of the ferroelectric capacitors due to etching process and interlayer dielectric (ILD) deposition process was almost recovered by annealing in oxygen. Memory operation was confirmed in the 2T/2C SWL FeRAM with the capacitor area down to 16 μm^2. |
キーワード(和) | |
キーワード(英) | ferroelectric / sol-get / PZT film / FeRAM / Pt electrode |
資料番号 | SDM99-110 |
発行日 |
研究会情報 | |
研究会 | SDM |
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開催期間 | 1999/7/23(から1日開催) |
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テーマ(英) | |
委員長氏名(和) | |
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幹事氏名(和) | |
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幹事補佐氏名(和) | |
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講演論文情報詳細 | |
申込み研究会 | Silicon Device and Materials (SDM) |
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本文の言語 | ENG |
タイトル(和) | |
サブタイトル(和) | |
タイトル(英) | Integration of Split Word Line Ferroelectric Memories Using Etch Stopping Layers and Multi-Layer Etching Technology |
サブタイトル(和) | |
キーワード(1)(和/英) | / ferroelectric |
第 1 著者 氏名(和/英) | / Hyo-Jin Nam |
第 1 著者 所属(和/英) | LG Corporate Institute of Technology |
発表年月日 | 1999/7/23 |
資料番号 | SDM99-110 |
巻番号(vol) | vol.99 |
号番号(no) | 232 |
ページ範囲 | pp.- |
ページ数 | 6 |
発行日 |