Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2008
Session Number:P1
Session:
Number:P1-18
Method of Comparator Offset Manipulation by Fowler-Nordheim Stress
In-Young Chung,
pp.-
Publication Date:2008/7/7
Online ISSN:2188-5079
Summary:
In this paper, we propose a method to manipulate offsets of comparator circuits. By selective FN stressing on MOS transistors, it alters MOS threshold voltages and the comparator offset resultantly. This method has numerous advantages over the conventional offset cancelling methods, not increasing circuit area, nor degrading operation timings, nor demanding the floating gate process. This method also can be utilized for a read-only memory cell by intentionally implanting positive or negative offsets, which is multiple times programmable with the standard CMOS process. We apply it to the latch-type comparator and show that the offset get adjusted to the desired value through experiments.