Summary
2019 Joint International Symposium on Electromagnetic Compatibility and Asia-Pacific International Symposium on Electromagnetic Compatibility, Sapporo
2019
Session Number:WedAM2B
Session:
Number:WedAM2B.4
Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence
Qiu Min, Er-Ping Li, Jian-Ming Jin,
pp.-
Publication Date:2016/10/5
Online ISSN:2188-5079
DOI:10.34385/proc.58.WedAM2B.4
Summary:
This paper presents a comprehensive modeling and analysis for the metal-oxide-semiconductor (MOS) capacitance of through silicon via in consideration of the temperature dependence. The MOS effect is physically modeled by a Poisson-Boltzmann equation with the distribution of mobile charge carriers included. Temperature-dependent parameters considered in the analysis are the intrinsic carrier density, permittivity, and bandgap of the silicon. With the equation solved, the variations of MOS capacitance with the bias voltage, operating frequency, oxide charge, and temperature can be obtained. The calculated MOS capacitances under different temperature show a good agreement with measurement results, which verifies the accuracy of the presented modeling and analysis.