Summary
International Symposium on Electromagnetic Compatibility
2014
Session Number:14P2-B
Session:
Number:14P2-B4
Crosstalk Rudction in TSV Arrays with Direct Ohmic Contact between Metal and Silicon-substrate
Decao Yang, Er-Ping Li, Jun Li, Xingchang Wei, Jianyong Xie, M. Swaminathan,
pp.-
Publication Date:2014/05/12
Online ISSN:2188-5079
Summary:
In response to the requirement of novel crosstalk-reduction scheme for high density through silicon via(TSV) interconnects in silicon interposer, this paper presents a structure and performance analysis of through-silicon via(TSV) with direct ohmic contact between a ground TSV and silicon substrate for coupling mitigation purposes. We further expand the structure to a 3x3 TSV array and investigate its cross-talk performance. The simulation results show that the signaling scheme, which uses direct ohmic contact for ground TSVs, can effectively reduce the crosstalk and coupling noise between signal TSVs than the conventional design.