Summary
Optoelectronics and Communications Conference/International Conference on Integrated Optics and Optical Fiber Communication
2007
Session Number:12D1
Session:
Number:12D1-2
Hetero III-V-N alloy/Si technologies toward monolithic OEIC chips including high-dense light emitting devices
H. Yonezu, Y. Furukawa, A. Wakahara,
pp.388-389
Publication Date:2007/7/9
Online ISSN:2188-5079
Summary:
Structural defect-free Si and InGaPN/GaPN double hetereostructure layers were grown on a Si substrate. Si MOSFETs and LEDs, which are elemental devices for monolithic OEICs, were implemented into a single chip.