Summary
Optoelectronics and Communications Conference/International Conference on Integrated Optics and Optical Fiber Communication
2007
Session Number:11D3
Session:
Number:11D3-1
Very Low Noise AlInAs Avalanche Photodiodes with Gain-Bandwidth product of 140 GHz
M. Achouche, A. Rouvie, J. Decobert, N. Lagay, F. Pommereau, D. Carpentie,
pp.188-189
Publication Date:2007/7/9
Online ISSN:2188-5079
Summary:
We demonstrate a new planar junction AlInAs APD with carbon-doped charge layer achieving low dark current of 13nA (M=10) and very low excess noise factor of 3 (M=10). These characteristics are simultaneously achieved with a responsivity of 9.5 A/W (M=10) and a gain x bandwidth of 140 GHz.