Summary

International Technical Conference on Circuits/Systems, Computers and Communications

2008

Session Number:P2

Session:

Number:P2-17

Design of Low Noise Dualband CMOS RF Front-end for IEEE 802.11n

Sang-Sun Yoo,  Yong-Chang Choi,  Hyung-Joun Yoo,  

pp.-

Publication Date:2008/7/7

Online ISSN:2188-5079

DOI:10.34385/proc.39.P2-17

PDF download (117.4KB)

Summary:
A dualband low noise RF front-end is designed in 0.18um CMOS technology. The operation frequency is selected by turning on and off the switched inductor and capacitor. By using the self-matched capacitor, simultaneous input and noise matching can be easily achieved in 2 GHz and 5 GHz band. Proposed RF front-end has the good performances because self-matched capacitor helps reducing the number of switchable components which can cause the noise and loss in circuit.