Summary
International Technical Conference on Circuits/Systems, Computers and Communications
2008
Session Number:P2
Session:
Number:P2-17
Design of Low Noise Dualband CMOS RF Front-end for IEEE 802.11n
Sang-Sun Yoo, Yong-Chang Choi, Hyung-Joun Yoo,
pp.-
Publication Date:2008/7/7
Online ISSN:2188-5079
DOI:10.34385/proc.39.P2-17
PDF download (117.4KB)
Summary:
A dualband low noise RF front-end is designed in 0.18um CMOS technology. The operation frequency is selected by turning on and off the switched inductor and capacitor. By using the self-matched capacitor, simultaneous input and noise matching can be easily achieved in 2 GHz and 5 GHz band. Proposed RF front-end has the good performances because self-matched capacitor helps reducing the number of switchable components which can cause the noise and loss in circuit.